Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
82 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
4000 MHz |
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|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
30 dBm |
COMPONENT |
3 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13 dB |
-40 Cel |
MATTE TIN |
e3 |
3400 MHz |
3800 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-40 Cel |
LOW NOISE |
17000 MHz |
24000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
27 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
0 MHz |
22000 MHz |
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|
Analog Devices |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BICMOS |
AEC-Q100 |
1 |
5.6 mA |
1.8/3.3 |
SOLCC6,.04,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Broadcom |
WIDE BAND LOW POWER |
13 dBm |
2.5 |
COMPONENT |
50 ohm |
20 dB |
Matte Tin (Sn) |
e3 |
1500 MHz |
8000 MHz |
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|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
2 |
130 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
105 Cel |
24 dB |
-40 Cel |
2300 MHz |
5000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
14.9 dB |
-40 Cel |
MATTE TIN |
e3 |
20 MHz |
1000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
69 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
105 Cel |
18.5 dB |
-40 Cel |
MATTE TIN |
e3 |
30 MHz |
6000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
10.6 dB |
-40 Cel |
10 MHz |
8000 MHz |
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|
Qorvo |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
18 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
2000 MHz |
6000 MHz |
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Cml Microcircuits |
WIDE BAND LOW POWER |
||||||||||||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
19 dB |
-55 Cel |
20000 MHz |
44000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
12 dBm |
60 mA |
COMPONENT |
5 |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
15 dB |
-40 Cel |
MATTE TIN |
e3 |
4000 MHz |
10000 MHz |
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|
Analog Devices |
NARROW BAND MEDIUM POWER |
17 dBm |
COMPONENT |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
2200 MHz |
2800 MHz |
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|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
16 |
CERAMIC |
GAAS |
1 |
6 |
LCC16,.24SQ,40/32 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TUNGSTEN NICKEL GOLD |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
Gold Flash (Au) - with Nickel (Ni) barrier |
17000 MHz |
27000 MHz |
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Agilent Technologies |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.5 |
55 mA |
COMPONENT |
6 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
23 dB |
LOW NOISE |
0 MHz |
1800 MHz |
|||||||||
Mini-circuits |
WIDE BAND LOW POWER |
15 dBm |
1.6 |
COMPONENT |
50 ohm |
85 Cel |
13.3 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
USABLE TO 10 GHZ |
e0 |
0 MHz |
8000 MHz |
||||||||||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
4 |
PLASTIC/EPOXY |
1 |
15 dBm |
1.6 |
COMPONENT |
3.6 |
MODULE,4LEAD(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.3 dB |
-40 Cel |
TIN SILVER OVER NICKEL |
USABLE TO 10 GHZ |
e2 |
0 MHz |
8000 MHz |
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|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BICMOS |
AEC-Q100 |
1 |
10 dBm |
5.6 mA |
COMPONENT |
1.8/3 |
SOLCC6,.04,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16.5 dB |
-40 Cel |
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|
Maxim Integrated |
WIDE BAND LOW POWER |
16 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
2 MHz |
1600 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
128 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
19 dB |
Tin (Sn) |
LOW NOISE |
e3 |
50 MHz |
2000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
1 |
13 dBm |
2 |
70 mA |
COMPONENT |
5 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
14 dB |
Matte Tin (Sn) |
LOW NOISE |
e3 |
50 MHz |
6000 MHz |
|||||||||
|
Agilent Technologies |
WIDE BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
10.5 dB |
50 MHz |
7000 MHz |
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|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
28 dBm |
120 mA |
COMPONENT |
3.3 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14.4 dB |
-40 Cel |
TIN SILVER OVER NICKEL |
LOW NOISE, HIGH RELIABILITY |
e2 |
50 MHz |
6000 MHz |
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|
Mitsubishi Electric |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
14.77 dBm |
4 |
MODULE |
3.5,12.5 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
90 Cel |
-30 Cel |
400 MHz |
470 MHz |
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|
Mitsubishi Electric |
NARROW BAND HIGH POWER |
|||||||||||||||||||||||||
|
Mitsubishi Electric |
NARROW BAND HIGH POWER |
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|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
HYBRID |
IEC-61249-2-21 |
1 |
20 dBm |
5 |
2300 mA |
COMPONENT |
7 |
SOP8,.25 |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-40 Cel |
LOW NOISE |
150 MHz |
960 MHz |
||||||
Qorvo |
WIDE BAND MEDIUM POWER |
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|
Mini-circuits |
WIDE BAND LOW POWER |
21 dBm |
1.8 |
COAXIAL |
50 ohm |
85 Cel |
4.5 dB |
-40 Cel |
SMA |
50 MHz |
3000 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
PLASTIC/EPOXY |
GAAS |
1 |
28 dBm |
910 mA |
COMPONENT |
5 |
MODULE(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
12.5 dB |
700 MHz |
1000 MHz |
||||||||||||
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
22.7 mA |
3.3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TIN |
e3 |
|||||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
|||||||||||||||||||||||||
|
Wolfspeed |
NARROW BAND HIGH POWER |
|||||||||||||||||||||||||
Cml Microcircuits |
WIDE BAND LOW POWER |
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|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
20 dBm |
2 |
85 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
TIN SILVER OVER NICKEL |
HIGH RELIABILITY |
e2 |
0 MHz |
4000 MHz |
|||||
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
20 dBm |
2 |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-45 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
0 MHz |
4000 MHz |
|||||||
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
20 dBm |
2.2 |
COMPONENT |
4.8 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-45 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
0 MHz |
4000 MHz |
|||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
20 dBm |
2.2 |
COMPONENT |
4.8 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-45 Cel |
TIN SILVER OVER NICKEL |
HIGH RELIABILITY |
e2 |
0 MHz |
4000 MHz |
||||||
|
Mini-circuits |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
4.8 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-45 Cel |
||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
6 dBm |
COMPONENT |
50 ohm |
85 Cel |
10 dB |
-55 Cel |
LOW NOISE |
24000 MHz |
40000 MHz |
||||||||||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 |
TSSOP8,.19 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
Analog Devices |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
1.4 |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
9 dB |
-40 Cel |
1700 MHz |
2500 MHz |
||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
COMPONENT |
5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
6000 MHz |
|||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
TIN LEAD |
LOW NOISE |
e0 |
12000 MHz |
16000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.