Photodiodes
| Part | RoHS | Manufacturer | Optoelectronic Type | Mounting Feature | Terminal Finish | Configuration | Size | Maximum Dark Current | Maximum Supply Voltage | No. of Functions | Infrared (IR) Range | Peak Wavelength (nm) | Packing Method | Maximum Response Time | Sub-Category | Maximum Reverse Voltage | Semiconductor Material | Maximum Operating Temperature | Minimum Reverse Breakdown Voltage | Shape | Minimum Operating Temperature | Additional Features | Nominal Light Current | JESD-609 Code |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
300 nA |
Photo Diodes |
40 V |
Germanium |
85 Cel |
-40 Cel |
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|
Renesas Electronics |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
10 nA |
.00000012 s |
Photo Diodes |
32 V |
85 Cel |
-30 Cel |
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|
Renesas Electronics |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
30 nA |
.00000005 s |
Photo Diodes |
20 V |
Silicon |
80 Cel |
e0 |
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|
Renesas Electronics |
PIN PHOTODIODE |
SURFACE MOUNT |
Photo Diodes |
20 V |
InGaAs |
85 Cel |
-40 Cel |
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|
Renesas Electronics |
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|
Renesas Electronics |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
5 nA |
.000000001 s |
Photo Diodes |
20 V |
InGaAs |
60 Cel |
-30 Cel |
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|
Renesas Electronics |
PIN PHOTODIODE |
SINGLE |
30 nA |
1 |
YES |
1000 |
85 Cel |
20 V |
ROUND |
-40 Cel |
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|
Renesas Electronics |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
200 nA |
Photo Diodes |
45 V |
Germanium |
85 Cel |
-40 Cel |
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|
Renesas Electronics |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
5 nA |
.000000001 s |
Photo Diodes |
20 V |
InGaAs |
60 Cel |
-30 Cel |
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|
Renesas Electronics |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
30 nA |
Photo Diodes |
InGaAs |
85 Cel |
-40 Cel |
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|
Renesas Electronics |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
500 nA |
Photo Diodes |
48 V |
Germanium |
85 Cel |
-40 Cel |
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|
Renesas Electronics |
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|
Renesas Electronics |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
1 nA |
Photo Diodes |
20 V |
InGaAs |
85 Cel |
-40 Cel |
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|
Renesas Electronics |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
500 nA |
Photo Diodes |
48 V |
Germanium |
85 Cel |
-40 Cel |
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|
Renesas Electronics |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
1 nA |
Photo Diodes |
20 V |
InGaAs |
85 Cel |
-40 Cel |
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|
Renesas Electronics |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
300 nA |
Photo Diodes |
40 V |
Germanium |
85 Cel |
-40 Cel |
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|
Renesas Electronics |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
1 nA |
Photo Diodes |
20 V |
InGaAs |
85 Cel |
-40 Cel |
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|
Renesas Electronics |
AVALANCHE PHOTODIODE |
SURFACE MOUNT |
200 nA |
.0000000008 s |
Photo Diodes |
45 V |
Germanium |
60 Cel |
-40 Cel |
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|
Renesas Electronics |
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|
|
Renesas Electronics |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
25 nA |
Photo Diodes |
InGaAs |
85 Cel |
-40 Cel |
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|
Renesas Electronics |
AVALANCHE PHOTODIODE |
30 nA |
Photo Diodes |
100 V |
InGaAs |
85 Cel |
-40 Cel |
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|
Renesas Electronics |
PIN PHOTODIODE |
SINGLE |
1.3 mm |
10 nA |
1 |
YES |
1000 |
80 Cel |
20 V |
ROUND |
-40 Cel |
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|
Renesas Electronics |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
10 nA |
.00000012 s |
Photo Diodes |
32 V |
Silicon |
80 Cel |
-30 Cel |
e0 |
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|
Renesas Electronics |
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|
Renesas Electronics |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
500 nA |
.0000000008 s |
Photo Diodes |
48 V |
Germanium |
60 Cel |
-40 Cel |
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|
Renesas Electronics |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
200 nA |
.0000000008 s |
Photo Diodes |
45 V |
Germanium |
60 Cel |
-30 Cel |
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|
Renesas Electronics |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
3 nA |
.000000001 s |
Photo Diodes |
20 V |
InGaAs |
70 Cel |
-30 Cel |
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|
Renesas Electronics |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
300 nA |
Photo Diodes |
40 V |
Germanium |
85 Cel |
-40 Cel |
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|
Renesas Electronics |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
4 nA |
.000000001 s |
Photo Diodes |
80 Cel |
-20 Cel |
e0 |
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|
Renesas Electronics |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
30 nA |
.000000125 s |
Photo Diodes |
32 V |
80 Cel |
-40 Cel |
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|
Renesas Electronics |
PIN PHOTODIODE |
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|
Renesas Electronics |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
100 nA |
.000000004 s |
Photo Diodes |
120 V |
InGaAs |
60 Cel |
-40 Cel |
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|
Renesas Electronics |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
25 nA |
Photo Diodes |
InGaAs |
85 Cel |
-40 Cel |
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|
|
Renesas Electronics |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
30 nA |
Photo Diodes |
InGaAs |
85 Cel |
-40 Cel |
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|
Renesas Electronics |
Tin/Lead (Sn/Pb) |
e0 |
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|
Renesas Electronics |
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|
Renesas Electronics |
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|
Renesas Electronics |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
5 nA |
Photo Diodes |
20 V |
InGaAs |
85 Cel |
-40 Cel |
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|
Renesas Electronics |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
5 nA |
.0000000003 s |
Photo Diodes |
20 V |
InGaAs |
80 Cel |
-40 Cel |
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|
Renesas Electronics |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
200 nA |
.0000000008 s |
Photo Diodes |
45 V |
Germanium |
60 Cel |
-40 Cel |
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|
Renesas Electronics |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
200 nA |
Photo Diodes |
45 V |
Germanium |
85 Cel |
-40 Cel |
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|
Renesas Electronics |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
500 nA |
Photo Diodes |
48 V |
Germanium |
85 Cel |
-40 Cel |
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|
Renesas Electronics |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
200 nA |
Photo Diodes |
45 V |
Germanium |
85 Cel |
-40 Cel |
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|
Renesas Electronics |
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|
Renesas Electronics |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
200 nA |
Photo Diodes |
45 V |
Germanium |
85 Cel |
-40 Cel |
||||||||||||||||
|
Renesas Electronics |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
200 nA |
Photo Diodes |
45 V |
Germanium |
85 Cel |
-40 Cel |
||||||||||||||||
|
Renesas Electronics |
PIN PHOTODIODE |
SINGLE |
20 nA |
1 |
YES |
1000 |
85 Cel |
20 V |
ROUND |
-40 Cel |
HIGH RELIABILITY |
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|
Renesas Electronics |
PIN PHOTODIODE |
SINGLE |
1.6 mm |
30 nA |
1 |
YES |
1000 |
85 Cel |
20 V |
ROUND |
-40 Cel |
A photodiode is a type of electronic component that uses light to generate an electric current. It is a semiconductor device that is designed to respond to the presence of light by producing a flow of electrons. Photodiodes are widely used in a variety of applications, including in cameras, optical communication systems, and medical equipment.
Photodiodes work by converting light energy into electrical energy. When light hits the photodiode, it creates an electric current that is proportional to the intensity of the light. This current can be measured and used to determine the presence, intensity, and wavelength of the light.
Photodiodes are available in different types, each with their own characteristics and applications. The most common types of photodiodes are PIN photodiodes, avalanche photodiodes, and Schottky photodiodes.
PIN photodiodes are widely used in optical communication systems and are designed for high-speed and low-noise applications. They have a wide spectral response range and are able to detect both visible and infrared light.
Avalanche photodiodes are used in applications that require high sensitivity and low noise, such as in low-light-level imaging and spectroscopy. They are able to generate high gain and high-speed signals, making them ideal for use in low-light-level applications.
Schottky photodiodes are used in applications that require high-speed and high-frequency response, such as in microwave and millimeter-wave detection. They have a low junction capacitance and are able to detect fast-changing signals.