Renesas Electronics - NDL5151P1

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: MATTE TIN OVER NICKEL; Maximum Reverse Voltage: 50 V; Size: 4.7 mm; Peak Wavelength (nm): 850;

AVALANCHE PHOTODIODE;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Configuration: SINGLE; Maximum Response Time: .000000001 s;

PIN PHOTODIODE; No. of Functions: 1; Size: 1.6 mm; Minimum Operating Temperature: -40 Cel; Peak Wavelength (nm): 1000; Minimum Reverse Breakdown Voltage: 20 V;

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: Silicon; Maximum Dark Current: .02 nA; Maximum Operating Temperature: 80 Cel; Minimum Operating Temperature: -40 Cel;

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 635; Maximum Operating Temperature: 85 Cel; Infrared (IR) Range: NO; Size: 1 mm;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Nominal Light Current: .025 mA; Maximum Operating Temperature: 80 Cel; Maximum Response Time: .000000125 s; Maximum Reverse Voltage: 20 V;

Photo Diodes;

G12183-003K by Hamamatsu Photonics Kk is a single PIN photodiode with a peak wavelength of 2300nm. It operates b/w -40°C to 85°C, with a max dark current of 4000nA. Ideal for applications requiring IR detection in a compact 0.3mm round shape.

PIN PHOTODIODE; No. of Functions: 1; Peak Wavelength (nm): 1000; Minimum Reverse Breakdown Voltage: 20 V; Configuration: SINGLE; Minimum Operating Temperature: -20 Cel;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 120 V; Semiconductor Material: Silicon; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -60 Cel;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Nickel (Sn/Ni); Maximum Operating Temperature: 100 Cel; Minimum Reverse Breakdown Voltage: 20 V; Peak Wavelength (nm): 950;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; JESD-609 Code: e0; Maximum Dark Current: 5 nA;

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 420; Configuration: COMPLEX; Shape: SQUARE; Semiconductor Material: Silicon;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: Silicon; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 60 Cel; Maximum Reverse Voltage: 185 V;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Minimum Reverse Breakdown Voltage: 32 V; Additional Features: DAYLIGHT FILTER; Shape: RECTANGULAR;

Photo Diodes;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 2 nA; Maximum Reverse Voltage: 20 V; Semiconductor Material: Silicon;

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Maximum Response Time: .0000000008 s; Minimum Operating Temperature: -40 Cel; Semiconductor Material: Germanium; Maximum Dark Current: 500 nA;

BPW20RF by Vishay Intertechnology is a single photodiode with a peak wavelength of 920nm. With a small size of 5.9mm, it operates in temperatures ranging from -40°C to 125°C. Ideal for applications requiring infrared detection and a min reverse breakdown voltage of 10V.