Flash Memory

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
SST26VF064B-104I/SO	Microchip Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm	Not Qualified		SPI		67108864 bit	2.7 V			e3			NOR TYPE	.000045 Amp	10.3 mm			3
M25P128-VMF6TPB	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	10000 Write/Erase Cycles	50 MHz	7.5 mm	Not Qualified		SPI		134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	10.3 mm			2.7
PC28F128P33BF60A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	28 mA	8388608 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			8 mm	Not Qualified			BOTTOM	134217728 bit	2.3 V		8	e1	30	260	NOR TYPE	.002 Amp	10 mm	YES	60 ns	3	NO
S29AL008J70TFI013	Infineon Technologies	FLASH		48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	3	YES		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8			.5 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm	1000000 Write/Erase Cycles		12 mm				TOP	8388608 bit	2.7 V	DATA RETENTION 20 YEARS TYPICAL AVAILABLE		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
AM29F800BB-55EF	Spansion	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.001 Amp	18.4 mm		55 ns	5	YES
SDINBDG4-8G-ZA	Western Digital	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			15	.5 mm	105 Cel		8GX8	8G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	.8 mm			11.5 mm					68719476736 bit	2.7 V						MLC NAND TYPE		13 mm
MX25R1635FZUIL0	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4194304 words	1.8			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.5 mm	85 Cel		4MX4	4M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.6 mm		80 MHz	2 mm					16777216 bit	1.65 V	IT IS ALSO CONFIGURED AS 16M X 1			NOT SPECIFIED	NOT SPECIFIED			3 mm			3
MT25QU512ABB1EW9-0SIT	Micron Technology	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	SMALL OUTLINE						85 Cel		512MX1	512M	-40 Cel					DUAL			R-PDSO-N8		2 V			166 MHz						536870912 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE					1.8
MT29F128G08AJAAAWP-ITZ:A	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		16GX8	16G	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm					137438953472 bit	2.7 V			e3			MLC NAND TYPE		18.4 mm			2.7
MX25V1635FM1ITR	Macronix	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		10 mA	2097152 words	3			8	SMALL OUTLINE	SOP8,.25	4		20	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm			SPI		16777216 bit	2.3 V	ALSO IT CAN BE CONFIGURED AS 8M X 2 BIT					NOR TYPE	.00005 Amp	4.9 mm			3
W25Q80DVZPIG	Winbond Electronics	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified		SPI		8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	6 mm			3
SST25VF010A-33-4C-SAE	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	1048576 words			3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified		SPI		1048576 bit	2.7 V			e3	10	260	NOR TYPE	.000015 Amp	4.9 mm
SST39VF1601-70-4C-EKE-T	Microchip Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	512	YES	MATTE TIN		DUAL	1		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V			e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
W25Q128JWPIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	16777216 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	1		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	6 mm			1.8
IS21ES04G-JCLI-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	1 mm			11.5 mm					34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm			3.3
MT25QU512ABB8E12-0SIT/TR	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA	67108864 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	166 MHz	6 mm			SPI		536870912 bit	1.7 V			e1	30	260	NOR TYPE	.0001 Amp	8 mm			1.8
THGBMNG5D1LBAIL	Toshiba	FLASH CARD	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS			4294967296 words				8	GRID ARRAY	BGA153,14X14,20				.5 mm	85 Cel		4GX8	4G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V				11 mm					34359738368 bit	2.7 V								13 mm
S25FL256SAGBHI200	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		64MX4	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1		e1			NOR TYPE	.0001 Amp	8 mm			3
MX25R1635FZUIL0TR	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		10 mA	2097152 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	2			.5 mm	85 Cel		2MX8	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	80 MHz	2 mm					16777216 bit	1.65 V	IT IS ALSO CONFIGURED AS 16M X 1					NOR TYPE	.000000035 Amp	3 mm			1.8
S29GL128P11FFI010	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	134217728 words	3	YES	3/3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		128MX1	128M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				134217728 bit	2.7 V		8/16	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S25FL256SAGMFI011	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		64MX4	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1		e3	30	260	NOR TYPE	.0001 Amp	10.3 mm			3
SST25VF010A-33-4I-SAE-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	1048576 words			3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified		SPI		1048576 bit	2.7 V			e3	10	260	NOR TYPE	.000015 Amp	4.9 mm
SST25WF080B-40I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		15 mA	8388608 words	1.8			1	SMALL OUTLINE	SOP8,.23			20	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8		1.95 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm			SPI		8388608 bit	1.65 V			e3			NOR TYPE	.00001 Amp	4.9 mm			1.8
MT25QL01GBBB8ESF-0AAT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			134217728 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		128MX8	128M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.5 mm					1073741824 bit	2.7 V								10.3 mm			3
MT25QU512ABB8E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		512MX1	512M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					536870912 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MX25L51245GMI-08G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			134217728 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		128MX4	128M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.65 mm		166 MHz	7.52 mm					536870912 bit	2.7 V	ALSO CONFIGURED WITH 1-BIT WIDTH			NOT SPECIFIED	NOT SPECIFIED			10.3 mm			3
N25Q128A13ESE40E	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.41		Flash Memories	20	1.27 mm	85 Cel	TOTEM POLE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified		SPI		134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.285 mm			3
MX25L3233FM2I-08GTR	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3.3			8	SMALL OUTLINE	SOP8,.3	2		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm			SPI		33554432 bit	2.65 V	ALSO IT CAN BE CONFIGURED AS 32M X 1 BIT					NOR TYPE	.00002 Amp	5.28 mm			3
S25FL128SAGMFIR00	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1		e3	30	260	NOR TYPE	.0001 Amp	10.3 mm			3
AT25SF041B-SSHD-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		18.5 mA	4194304 words	3			1	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	108 MHz	3.9 mm			SPI		4194304 bit	2.7 V						NOR TYPE	.00003 Amp	4.925 mm			3
MT29F1G08ABADAWP-IT:DTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128MX8	128M	-40 Cel			Tin (Sn)		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm					1073741824 bit	2.7 V			e3	30	260	SLC NAND TYPE		18.4 mm			3.3
MT25QU128ABA8ESF-0SIT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		128MX1	128M	-40 Cel					DUAL			R-PDSO-G16		2 V	2.65 mm		166 MHz	7.5 mm					134217728 bit	1.7 V								10.3 mm			1.8
MTFC16GAPALBH-ITTR	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	3-STATE	16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B153		3.6 V	1.2 mm		200 MHz	11.5 mm					137438953472 bit	2.7 V				30	260	NAND TYPE		13 mm			2.7
AT25SF041-SSHD-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 mA	4194304 words	3			1	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm		104 MHz	3.9 mm			SPI		4194304 bit	2.5 V						NOR TYPE	.000025 Amp	4.925 mm			3
AT25SF321B-SSHB-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3			8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	108 MHz	3.9 mm			SPI		33554432 bit	2.7 V			e4		260	NOR TYPE	.000025 Amp	4.925 mm			3
MX25L25645GZ2I-08G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel			TIN		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	120 MHz	6 mm			SPI		268435456 bit	2.7 V			e3			NOR TYPE	.00002 Amp	8 mm			3
N25Q128A13ESE40F	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified		SPI		134217728 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	5.285 mm			3
S29AL016J70BFI020	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B48	3	3.6 V	1 mm			6.15 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V	TOP BOOT BLOCK		e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
S29GL512T10TFI020	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		32MX16	32M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G56	3	3.6 V	1.2 mm			14 mm					536870912 bit	2.7 V			e3		260			18.4 mm		100 ns	2.7
W25Q512JVEIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		40 mA	67108864 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	4		20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	3 V	ALSO OPERATES AT 2.7VMIN @104MHZ					NOR TYPE	.00006 Amp	8 mm			3.3
MT25QL256ABA8E12-1SITTR	Micron Technology	FLASH																																	TIN SILVER COPPER																				e1	30	260						3
SDSDQAB-008G	Western Digital	FLASH CARD	OTHER		DIE	RECTANGULAR		YES	1	CMOS		NO LEAD					8589934592 words				8	UNCASED CHIP						85 Cel		8GX8	8G	-25 Cel					UPPER			R-XUUC-N											68719476736 bit							NAND TYPE
AT45DB081E-SSHN2B-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 mA	1048576 words	3		1.8/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm	Not Qualified		SPI		8388608 bit	2.3 V	IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE		e4			NOR TYPE	.00004 Amp	4.925 mm			3
AT45DB642D-CNU	Atmel	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3		3/3.3	1	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel			Gold (Au) - with Nickel (Ni) barrier		DUAL		HARDWARE	R-XDSO-N8	3	3.6 V	1 mm	100000 Write/Erase Cycles	66 MHz	6 mm	Not Qualified		SPI		67108864 bit	2.7 V	ORGANIZED AS 8192 PAGES OF 1056 BYTES EACH		e4	40	260	NOR TYPE	.000015 Amp	8 mm			2.7
SDINBDG4-32G-I1	Western Digital	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	85 Cel		32GX8	32G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V	1 mm	3000 Write/Erase Cycles	200 MHz	11.5 mm					274877906944 bit	2.7 V						MLC NAND TYPE		13 mm			3.3
MT25QL128ABA8E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA		3			1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		16MX8	16M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	2.7 V				30	260	NOR TYPE	.00005 Amp	8 mm			3
MT29F1G08ABADAWP-IT:D	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	134217728 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES	TIN	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				1073741824 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	3.3	NO
S25FL256SAGNFI010	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3		3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	20	1.27 mm	85 Cel		64MX4	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1		e3	30	260	NOR TYPE	.0001 Amp	8 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.