Microwave Mixer & Detector Diodes

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Maximum Impedance	Frequency Band	Maximum Output Current	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Schottky Barrier Type	Maximum Operating Temperature	Maximum Pulsed Input Power	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Additional Features	Minimum Impedance	JEDEC-95 Code	Minimum Breakdown Voltage	Maximum Non Repetitive Peak Forward Current	JESD-609 Code	Minimum Operating Frequency	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Maximum Operating Frequency
5082-2835	Broadcom	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		ULTRA HIGH FREQUENCY	.01 A	.34 V	1 pF	SCHOTTKY		1		LONG FORM	Rectifier Diodes	8 V		150 Cel		-60 Cel	TIN LEAD	O-LALF-W2	1	ISOLATED	Not Qualified							e0				SILICON
BAT68E6327HTSA1	Infineon Technologies	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			1 pF	SCHOTTKY		1		SMALL OUTLINE				150 Cel			TIN	R-PDSO-G3	1		Not Qualified	.15 W						e3				SILICON
HSMS-2822-TR2G	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		C BAND		.34 V	1 pF	SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes			150 Cel			NICKEL PALLADIUM GOLD	R-PDSO-G3	1		Not Qualified	.25 W						e4		20	260	SILICON
DB2J20100L	Panasonic	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	.5 A	.4 V				1		SMALL OUTLINE	Rectifier Diodes	20 V		85 Cel		-40 Cel		R-PDSO-F2									3 A			NOT SPECIFIED	NOT SPECIFIED	SILICON
HSMS-2812-TR2G	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS				.41 V	2 pF	SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	20 V		150 Cel			NICKEL PALLADIUM GOLD	R-PDSO-G3	1		Not Qualified							e4		20	260	SILICON
BAT62-03WE6327XT	Infineon Technologies	MIXER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			.02 A	1 V	.6 pF	SCHOTTKY	10 uA	1	40 V	SMALL OUTLINE			LOW BARRIER	150 Cel				R-PDSO-G2				.1 W	TR, 7 INCH : 3000									SILICON
HSMS-2850-TR2G	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		L BAND				SCHOTTKY		1		SMALL OUTLINE	Other Diodes		ZERO BARRIER	150 Cel			NICKEL PALLADIUM GOLD	R-PDSO-G3	1		Not Qualified							e4	.915 GHz	20	260	SILICON	4 GHz
HSMS-2812-BLK	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY					.41 V		SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	20 V		150 Cel			TIN LEAD	R-PDSO-G3			Not Qualified							e0				SILICON
HSMS-2812BLK	Agilent Technologies	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			1 A	.4 V	2 pF	SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	20 V		150 Cel			TIN LEAD	R-PDSO-G3			Not Qualified							e0				SILICON
BAT62-03WE6327	Infineon Technologies	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE				1 V	.6 pF	SCHOTTKY		1		SMALL OUTLINE	Rectifier Diodes	40 V	LOW BARRIER	150 Cel			MATTE TIN	R-PDSO-G3	1		Not Qualified	.1 W						e3			260	SILICON
BA592E6327HTSA1	Infineon Technologies	MIXER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY			1.4 pF			1		SMALL OUTLINE							TIN	R-PDSO-G2	1		Not Qualified							e3				SILICON
MMBD301M3T5G	Onsemi	MIXER DIODE	DUAL	FLAT	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		.45 V	1.5 pF	SCHOTTKY		1		SMALL OUTLINE	Rectifier Diodes	30 V		125 Cel		-55 Cel	MATTE TIN	R-PDSO-F3	1		Not Qualified	.2 W						e3		30	260	SILICON
SMS3923-040LF	Skyworks Solutions	MIXER DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		S BAND TO C BAND	.05 A	1 V	1.3 pF	SCHOTTKY	.5 uA	1	15 V	CHIP CARRIER				150 Cel		-65 Cel		R-PBCC-N2	1		Not Qualified	.075 W				20 V					260	SILICON	6000 GHz
BA891,115	NXP Semiconductors	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	.1 A	1 V	1.05 pF	PLANAR DOPED BARRIER		1		SMALL OUTLINE	Rectifier Diodes	35 V		150 Cel		-65 Cel	TIN	R-PDSO-F2	1		Not Qualified	.715 W						e3		30	260	SILICON
HSMS-2822G	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS					1 pF	SCHOTTKY		2		SMALL OUTLINE				150 Cel	.25 W		TIN	R-PDSO-G3	1		Not Qualified							e3				SILICON
MMBD301LT1	Onsemi	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			1.5 pF	SCHOTTKY		1		SMALL OUTLINE	Other Diodes			125 Cel			Tin/Lead (Sn/Pb)	R-PDSO-G3	1		Not Qualified	.2 W			TO-236AB			e0		30	235	SILICON
MBD301G	Onsemi	MIXER DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY			1.5 pF	SCHOTTKY		1		CYLINDRICAL	Other Diodes			125 Cel		-55 Cel	TIN SILVER COPPER	O-PBCY-T2			Not Qualified	.28 W			TO-226AC			e1			260	SILICON
BAT1504RE6152HTSA1	Infineon Technologies	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		X BAND			.25 pF	SCHOTTKY		2		SMALL OUTLINE			LOW BARRIER	150 Cel			TIN	R-PDSO-G3	1									e3				SILICON
BAT15099RE6327HTSA1	Infineon Technologies	MIXER DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	CROSSOVER RING, 4 ELEMENTS		X BAND	.11 A	.41 V	.5 pF	SCHOTTKY	5 uA	4	1 V	SMALL OUTLINE			LOW BARRIER	150 Cel		-55 Cel	TIN	R-PDSO-G4	1			.1 W				4 V		e3				SILICON
BAT1707E6327HTSA1	Infineon Technologies	MIXER DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			.75 pF	SCHOTTKY		2		SMALL OUTLINE				150 Cel			TIN	R-PDSO-G4	1	CATHODE		.15 W						e3				SILICON
DB2J50100L	Panasonic	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY				SCHOTTKY		1		SMALL OUTLINE				85 Cel		-40 Cel	TIN BISMUTH	R-PDSO-F2	1									e6				SILICON
SMS7621-079LF	Skyworks Solutions	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		X BAND	.05 A	.32 V	.25 pF	SCHOTTKY		1		SMALL OUTLINE	Rectifier Diodes	2 V	LOW BARRIER	150 Cel			Tin (Sn)	R-PDSO-F2	1		Not Qualified	.075 W	LOW NOISE					e3		40	260	SILICON
BAT15099E6433HTMA1	Infineon Technologies	MIXER DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS		X BAND			.35 pF	SCHOTTKY		2		SMALL OUTLINE			LOW BARRIER	150 Cel				R-PDSO-G4		CATHODE		.1 W	LOW NOISE									SILICON
DB2S31600L	Panasonic	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	.1 A	.55 V				1		SMALL OUTLINE	Rectifier Diodes	30 V		85 Cel		-40 Cel		R-PDSO-F2	1								1 A					SILICON
HSMS-2810-BLKG	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE				.41 V	2 pF	SCHOTTKY		1		SMALL OUTLINE	Rectifier Diodes	20 V		150 Cel			NICKEL PALLADIUM GOLD	R-PDSO-G3	1		Not Qualified							e4		20	260	SILICON
BAT1704E6327HTSA1	Infineon Technologies	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			.75 pF	SCHOTTKY		2		SMALL OUTLINE				150 Cel			TIN	R-PDSO-G3	1			.15 W						e3				SILICON
BAT6202WH6327XTSA1	Infineon Technologies	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	.02 A	1 V	.6 pF	SCHOTTKY		1		SMALL OUTLINE	Rectifier Diodes	40 V	LOW BARRIER	150 Cel			MATTE TIN	R-PDSO-F2				.1 W						e3				SILICON
HSMS-2825-BLKG	Broadcom	MIXER DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS		C BAND		.34 V	.2 pF	SCHOTTKY	.1 uA	2	1 V	SMALL OUTLINE	Other Diodes			150 Cel		-65 Cel	NICKEL PALLADIUM GOLD	R-PDSO-G4	1	CATHODE	Not Qualified							e4		20	260	SILICON
SMMSD701T1G	Onsemi	MIXER DIODE				YES			SINGLE			.2 A	.5 V		SCHOTTKY		1			Rectifier Diodes	70 V		125 Cel			MATTE TIN		1									e3		30	260	SILICON
MMDL301T1G	Onsemi	MIXER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		.45 V	1.5 pF	SCHOTTKY		1		SMALL OUTLINE	Rectifier Diodes	30 V		150 Cel		-55 Cel	MATTE TIN	R-PDSO-G2	1		Not Qualified	.2 W						e3		30	260	SILICON
SMS3922-015LF	Skyworks Solutions	MIXER DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS					1.03 pF	SCHOTTKY		2		SMALL OUTLINE	Microwave Mixer Diodes			150 Cel			Matte Tin (Sn)	R-PDSO-G4	1		Not Qualified	.125 W						e3		40	260	SILICON
HSMS-2850-BLK	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY							SCHOTTKY		1		SMALL OUTLINE	Other Diodes			150 Cel			TIN LEAD	R-PDSO-G3			Not Qualified							e0	.915 GHz			GALLIUM ARSENIDE	4 GHz
HSMS-2850-TR1	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY							SCHOTTKY		1		SMALL OUTLINE	Other Diodes			150 Cel		-65 Cel	TIN LEAD	R-PDSO-G3			Not Qualified							e0	.915 GHz			GALLIUM ARSENIDE	4 GHz
MMDL770T1G	Onsemi	MIXER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1 V	1 pF	SCHOTTKY		1		SMALL OUTLINE	Rectifier Diodes	70 V		150 Cel		-55 Cel	MATTE TIN	R-PDSO-G2	1		Not Qualified	.2 W						e3		30	260	SILICON
HSMS-2812G	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS					1.2 pF	SCHOTTKY		2		SMALL OUTLINE				150 Cel	.25 W		TIN	R-PDSO-G3	1		Not Qualified							e3				SILICON
HSMS-285L-TR1G	Broadcom	MIXER DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 3 ELEMENTS		L BAND		.25 V		SCHOTTKY		3		SMALL OUTLINE	Other Diodes	2 V	ZERO BARRIER	150 Cel		-65 Cel	MATTE TIN	R-PDSO-G6	1		Not Qualified							e3		20	260	SILICON
MMBD301	Onsemi	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY			1.5 pF	SCHOTTKY		1		SMALL OUTLINE								R-PDSO-G3							TO-236AA							SILICON
SMMBD301LT3G	Onsemi	MIXER DIODE				YES			SINGLE			.2 A	.45 V		SCHOTTKY		1			Rectifier Diodes	30 V		150 Cel			MATTE TIN		1									e3		30	260	SILICON
DB4J310K0R	Panasonic	MIXER DIODE	DUAL	FLAT	4	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS		VERY HIGH FREQUENCY		.27 V			200 uA	2	30 V	SMALL OUTLINE	Other Diodes	30 V		85 Cel		-40 Cel		R-PDSO-F4	1													SILICON
HSCH-9161	Broadcom	MIXER DIODE	DUAL	FLAT	2	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	SINGLE	7500 ohm	MILLIMETER WAVE BAND						1		MICROWAVE	Other Diodes		ZERO BARRIER	175 Cel				S-CDMW-F2			Not Qualified			1800 ohm							220	GALLIUM ARSENIDE
HSMS-2852-BLKG	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		L BAND				SCHOTTKY		2		SMALL OUTLINE	Other Diodes		ZERO BARRIER	150 Cel			NICKEL PALLADIUM GOLD	R-PDSO-G3	1		Not Qualified							e4	.915 GHz	20	260	SILICON	4 GHz
SMS3922-079	Skyworks Solutions	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE					1.03 pF	SCHOTTKY		1		SMALL OUTLINE	Microwave Mixer Diodes			150 Cel			TIN LEAD	R-PDSO-F2	1		Not Qualified	.075 W						e0			220	SILICON
SMS7630-040LF	Skyworks Solutions	MIXER DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		X BAND	.05 A	.12 V		SCHOTTKY		1		CHIP CARRIER	Rectifier Diodes	1 V	ZERO BARRIER	175 Cel				R-PBCC-N2	1		Not Qualified	.25 W								30	260	SILICON
DB2730800L	Panasonic	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY						1		SMALL OUTLINE				85 Cel		-40 Cel		R-PDSO-F2												NOT SPECIFIED	NOT SPECIFIED	SILICON
HSMS-2800-BLKG	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE				.41 V	2 pF	SCHOTTKY		1		SMALL OUTLINE	Rectifier Diodes	70 V		150 Cel			NICKEL PALLADIUM GOLD	R-PDSO-G3	1		Not Qualified							e4		20	260	SILICON
HSMS-2820-BLKG	Broadcom	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		C BAND		.34 V	1 pF	SCHOTTKY		1		SMALL OUTLINE	Rectifier Diodes			150 Cel			NICKEL PALLADIUM GOLD	R-PDSO-G3	1		Not Qualified							e4		20	260	SILICON
MMBD452LT1G	Onsemi	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			1.5 pF	SCHOTTKY		2		SMALL OUTLINE	Other Diodes		LOW BARRIER	125 Cel		-55 Cel	MATTE TIN	R-PDSO-G3	1		Not Qualified	.225 W			TO-236AB			e3		30	260	SILICON
DA4X106U0R	Panasonic	MIXER DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	BRIDGE, 4 ELEMENTS		VERY HIGH FREQUENCY			15 pF			4		SMALL OUTLINE				150 Cel				R-PDSO-G4							TO-253AA					NOT SPECIFIED	NOT SPECIFIED	SILICON

Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.

A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.

A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.

Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.

Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84