Zetex Plc - ZVP1320FTA

ZXMP6A13FTA by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage, 1.1A Drain Current, and 0.4 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with ENHANCEMENT MODE operation up to 150°C.

Toshiba T2N7002BK,LM is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE configuration with built-in diode and resistor. With 1W power dissipation and 1.75 ohm Drain-Source Resistance, it operates in ENHANCEMENT MODE for efficient performance.

Vishay Intertechnology's SI2315BDS-T1-E3 is a P-CHANNEL FET with 12V DS Breakdown Voltage, 2.8A Drain Current, and 0.05 ohm On Resistance. Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and -55 to 150 °C operating temperature range.

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; No. of Terminals: 6; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .806 W; Transistor Application: SWITCHING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Vishay Intertechnology's BS170 is a N-channel FET with 60V DS breakdown voltage and 0.5A max drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.83W.

BSS123LT3G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. Its small outline package makes it suitable for surface mount designs.

BSS138LT3 by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage, 0.2A max drain current, and 3.5 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a temp range of -55 to 150 °C. It comes in a small outline package with gull wing terminals for surface mount assembly.

LBSS123LT1G by Leshan Radio is a N-CHANNEL FET with 100V DS Breakdown Voltage. It operates in ENHANCEMENT MODE, with 0.17A Drain Current and 6 ohm On Resistance. Ideal for small signal applications requiring high voltage tolerance and low power dissipation in compact designs.

BSS138WQ-7-F by Diodes Inc. is a small signal N-channel FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max power dissipation of 0.2W and can handle a max drain current of 0.2A.

Infineon's BSS138WH6433XTMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With 0.5W max power dissipation and -55 to 150°C operating temperature range, it offers reliable performance in various electronic devices.

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 8; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; JESD-30 Code: R-PDSO-G3; Terminal Position: DUAL;

Infineon's SN7002NH6327XTSA2 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.2A ID, and 5 ohm RDS(on). Ideal for small signal applications due to its 4.2pF Crss, it features a built-in diode and operates in enhancement mode. The GULL WING terminal form and SILICON element material make it suitable for surface mount designs.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;

Diodes Inc. MMBF170-7 is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features 0.5A max drain current, 5ohm RDS(on), and 5pF Crss. The small outline package with gull wing terminals makes it suitable for surface mount designs in enhancement mode operation up to 150°C.

NTJD1155LT1G by Onsemi is a Small Signal FET with N/P-Channel, ideal for switching applications. It features 8V DS Breakdown Voltage, 1.3A Drain Current, and 0.175ohm On Resistance. Operating from -55 to 150°C, it comes in a small outline package with Gull Wing terminals for surface mount assembly.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Terminal Form: GULL WING; Transistor Element Material: SILICON;

Fairchild Semiconductor's FDN5630_NL is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1.7A Drain Current, 0.1 ohm On Resistance, and operates in ENHANCEMENT MODE. The PLASTIC/EPOXY package has GULL WING terminals and can handle up to 150°C temperature.