Wolfspeed - CGH40120F-TB

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Case Connection: SOURCE; Terminal Form: FLAT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Maximum Power Dissipation Ambient: 68 W; Minimum DS Breakdown Voltage: 125 V;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Operating Mode: ENHANCEMENT MODE; Case Connection: SOURCE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61.4 W; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 795 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1;

N-CHANNEL; Minimum DS Breakdown Voltage: 65 V; Maximum Drain Current (ID): 7 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Peak Reflow Temperature (C): NOT SPECIFIED; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 26.7 W; Terminal Position: QUAD; No. of Terminals: 5;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: QUAD; No. of Elements: 1; JESD-30 Code: S-PQCC-N5;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE;

SD2931-12MR by STMicroelectronics is a N-CHANNEL RF Power FET with 125V DS Breakdown Voltage, suitable for Very High Frequency Band applications. Featuring a max ID of 20A and an operating mode of Enhancement Mode, this transistor has a flange mount package style and flat terminal form for easy installation in various RF power applications.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Maximum Operating Temperature: 165 Cel; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.2 W; Maximum Drain Current (ID): 2 A; JESD-609 Code: e3;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Transistor Application: AMPLIFIER; Package Style (Meter): SMALL OUTLINE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Additional Features: HIGH RELIABILITY; Highest Frequency Band: L BAND; Minimum DS Breakdown Voltage: 15 V;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified; Transistor Element Material: SILICON;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Minimum Operating Temperature: -40 Cel; JESD-609 Code: e3;