Unisonic Technologies - 2SC5200

  1. Home
  2. Unisonic Technologies - 2SC5200
2SC5200 by Unisonic Technologies

Image shown is a representation only.

Manufacturer Unisonic Technologies
Manufacturer's Part Number 2SC5200
Description NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Collector Current (IC): 15 A; Package Style (Meter): FLANGE MOUNT;
Datasheet 2SC5200 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 30 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 15 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 35
No. of Terminals: 3
Maximum Collector-Emitter Voltage: 230 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BD14016S by Fairchild Semiconductor

BD14016S

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; Terminal Position: SINGLE;
MJE3055TG by Onsemi

MJE3055TG

Onsemi

MJE3055TG by Onsemi is a NPN BJT with max. power dissipation of 75W, max. collector-emitter voltage of 60V, and max. collector current of 10A. Ideal for switching applications due to its single configuration and flange mount package style.
TIP147 by Central Semiconductor

TIP147

Central Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Transistor Element Material: SILICON;
TIP50 by Continental Device India

TIP50

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
MJD340T4 by STMicroelectronics

MJD340T4

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): .5 A; Terminal Position: SINGLE;
FZT851TA by Diodes Incorporated

FZT851TA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 6 A;
BD138 by Baneasa S A

BD138

Baneasa S A

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): 1 A; Terminal Form: THROUGH-HOLE;
BD679 by STMicroelectronics

BD679

STMicroelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
JANTX2N3055 by Cobham Plc

JANTX2N3055

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Package Body Material: METAL; No. of Terminals: 2;
TIP122 by Onsemi

TIP122

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;
TIP29C by Fairchild Semiconductor

TIP29C

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
TIP127 by Power Innovations

TIP127

Power Innovations

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Case Connection: COLLECTOR; Terminal Position: SINGLE;
TIP42C by Inchange Semiconductor

TIP42C

Inchange Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
JANTX2N2905A by Vpt Components

JANTX2N2905A

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
BD138 by Fairchild Semiconductor

BD138

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; Qualification: Not Qualified;
TIP125 by Texas Instruments

TIP125

Texas Instruments

TIP125 by Texas Instruments is a PNP BJT with 65W power dissipation, 1000 min hFE, and 60V max collector-emitter voltage. Ideal for applications requiring high current amplification in a Darlington configuration with built-in resistor. Suitable for use in power control circuits due to its high operating temperature of 150°C.
TIP42C by Bourns

TIP42C

Bourns

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A; Maximum Collector-Emitter Voltage: 100 V;
TIP50 by Bourns

TIP50

Bourns

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 10;
TIP31C by Central Semiconductor

TIP31C

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP127 by Inchange Semiconductor

TIP127

Inchange Semiconductor

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON;