Triquint Semiconductor - TGA2526

Qorvo's TQP7M9103 is a wide band medium power RF amplifier with 16.6 dB gain, operating from 400 MHz to 4000 MHz. It has a max input power of 30 dBm and VSWR of 10, suitable for surface mount applications in RF & microwave systems. With a compact plastic/epoxy package, it operates b/w -40°C to 85°C temperature range.

MAAM-011109-TR1000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 8 dB gain, operating from 10 MHz to 40 GHz. It can handle up to 17 dBm CW input power and has a temperature range of -40°C to +85°C. Ideal for RF and microwave applications requiring high performance in a compact form factor.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: MATTE TIN;

WIDE BAND MEDIUM POWER; Maximum Operating Temperature: 85 Cel; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 0 MHz; Gain: 10.1 dB; Maximum Input Power (CW): 24 dBm;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAN; Construction: COMPONENT;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Terminal Finish: NICKEL PALLADIUM GOLD; Minimum Operating Temperature: -40 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 2.6;

Analog Devices' HMC311SC70ETR is a GAAS RF amplifier with 11dB gain, operating from 0-8000MHz. It has a max input power of 10dBm and requires a 5V supply, making it ideal for wideband low-power applications in RF & microwave systems. The component is surface-mountable and operates b/w -40 to 85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 5 dBm;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Technology: GAAS; Terminal Finish: GOLD OVER NICKEL;

WIDE BAND LOW POWER; Maximum Operating Frequency: 2000 MHz; Terminal Finish: Matte Tin (Sn); Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 200 MHz; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Gain: 9 dB;

NARROW BAND LOW POWER;

NARROW BAND HIGH POWER;

Analog Devices' HMC441LP3ETR is a GAAS RF amplifier with 10dB gain, operating from 6.5 to 13.5GHz, handling up to 15dBm CW input power. With a compact surface-mount package and low power consumption of 115mA at 5V, it's ideal for wideband applications in RF and microwave systems.

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Minimum Operating Frequency: 100 MHz; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel;

WIDE BAND LOW POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Minimum Operating Frequency: 0 MHz; No. of Functions: 1;

Analog Devices' HMC8411LP2FETR is a wide band low power RF amplifier with 11 dB gain and 20 dBm max input power. Operating from -40 to 85°C, it covers frequencies from 10 MHz to 10 GHz. Ideal for RF and microwave applications requiring high performance in a compact form factor.