Toshiba - ULN2803AFWG(C,ELHA)

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 65 V;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .01 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.16 W; Maximum Collector Current (IC): .6 A; Package Style (Meter): SMALL OUTLINE;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Package Shape: RECTANGULAR;

BC817-40-7-F by Diodes Inc. is a NPN BJT transistor with 170 min hFE, 0.5A IC, and 45V VCE. Ideal for switching applications, it has a max power dissipation of 0.31W and operates up to 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Terminal Form: THROUGH-HOLE; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;

MMBT2222ATT1G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. With a max operating temp of 150°C, it offers fast switching times of 35ns (ton) and 285ns (toff).

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Terminal Form: GULL WING;

MMBT2907AT-7-F by Diodes Inc. is a PNP small signal BJT transistor with a max collector-emitter voltage of 60V and a max collector current of 0.6A. It is commonly used in applications requiring high-speed switching and amplification, such as audio amplifiers and digital circuits.

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;

BC847BS,115 by NXP Semiconductors is a NPN BJT transistor with 2 elements. It has a min DC current gain of 200 and can handle a max collector-emitter voltage of 45V. Ideal for switching applications, this surface-mount transistor operates at up to 150°C and has a peak reflow temperature of 260°C.