Toshiba - TPS618-A

PHOTO TRANSISTOR; Nominal Light Current: 1 mA; Maximum Operating Temperature: 100 Cel; Shape: ROUND; Maximum Dark Current: 200 nA; Additional Features: DAYLIGHT FILTER, HIGH RELIABILITY;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 830; Maximum Dark Current: 50 nA; Nominal Light Current: 9.6 mA; Maximum Response Time: .000009 s;

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Minimum Operating Temperature: -40 Cel; Configuration: SINGLE; Size: 5 mm; Infrared (IR) Range: YES;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .1 A; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 100 nA;

PHOTO TRANSISTOR; Shape: ROUND; No. of Functions: 1; Infrared (IR) Range: YES; Configuration: SINGLE; Size: 3.1 mm;

BPX81 by Infineon Technologies is an 850nm phototransistor with a max operating temperature of 80°C and a min operating temperature of -40°C. It has a max power dissipation of 0.09W and a max dark current of 200nA. This phototransistor is commonly used in applications requiring through hole mounting and can handle a max on-state current of 0.05A.

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; No. of Functions: 1; Additional Features: HIGH SENSITIVITY; Nominal Light Current: .4 mA; Minimum Collector-emitter Breakdown Voltage: 40 V;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 25 nA; Maximum Power Dissipation: .05 W; Configuration: SINGLE;

PHOTO TRANSISTOR; Terminal Finish: TIN SILVER COPPER; Maximum Operating Temperature: 85 Cel; Size: 1.4 mm; Peak Wavelength (nm): 600; Minimum Collector-emitter Breakdown Voltage: 20 V;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 25 nA; Peak Wavelength (nm): 900; Minimum Operating Temperature: -60 Cel; Maximum Operating Temperature: 125 Cel;

SFH309FA-4 by Infineon Technologies is a phototransistor with a peak wavelength of 900nm. It can operate in temperatures ranging from -55°C to 100°C and has a max power dissipation of 0.165W. This through-hole mount device is commonly used in applications requiring fast response times and low dark current.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -60 Cel; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation: .05 W; Maximum Response Time: .000008 s;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Maximum Dark Current: 100 nA; Peak Wavelength (nm): 850;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum On State Current: .05 A; Peak Wavelength (nm): 850;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Power Dissipation: .1 W; Shape: ROUND; Size: 1.8 mm;

PHOTO TRANSISTOR; Size: 3 mm; Configuration: SINGLE; Shape: ROUND; Infrared (IR) Range: YES; Maximum Dark Current: 200 nA;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000006 s; Peak Wavelength (nm): 850; Maximum Dark Current: 20 nA; Maximum Power Dissipation: .075 W;

SFH309 by Infineon Technologies is a phototransistor with a peak wavelength of 860nm. It has a max operating temperature of 100°C and a min operating temperature of -55°C. This through-hole mount device is commonly used in applications requiring low dark current and a max on-state current of 0.015A.

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .075 W; Shape: ROUND; Infrared (IR) Range: YES;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum On State Current: .015 A; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel; Maximum Dark Current: 200 nA;