Toshiba - TPS603

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 570; Maximum Operating Temperature: 100 Cel; Maximum On State Current: .02 A;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .125 W; Maximum Response Time: .000015 s;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum On State Current: .05 A; Peak Wavelength (nm): 850;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -60 Cel; Maximum Response Time: .000008 s; Maximum Power Dissipation: .05 W; Peak Wavelength (nm): 900;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Maximum Power Dissipation: .075 W; Maximum On State Current: .02 A; Maximum Dark Current: 100 nA;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum Power Dissipation: .15 W; Maximum Response Time: .000014 s;

SFH300FA by Infineon Technologies is a phototransistor with peak wavelength of 870nm, max operating temp of 100°C, and min operating temp of -40°C. It has a max on state current of 0.05A and terminal finish of Sn/Pb. Ideal for applications requiring precise light detection in environments with varying temperatures.

Photo Transistors; Mounting Feature: SURFACE MOUNT; Maximum Response Time: .000008 s; Minimum Operating Temperature: -60 Cel; Maximum Power Dissipation: .05 W; Maximum Operating Temperature: 125 Cel;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Maximum Operating Temperature: 100 Cel; Minimum Collector-emitter Breakdown Voltage: 35 V;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 900; Maximum Response Time: .000008 s; Maximum Dark Current: 25 nA; Minimum Operating Temperature: -60 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -60 Cel; Maximum Response Time: .000008 s; Maximum Power Dissipation: .05 W; Peak Wavelength (nm): 900;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 880; Maximum On State Current: .05 A; Maximum Operating Temperature: 100 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 900; Maximum Response Time: .0000075 s; JESD-609 Code: e0;

PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Terminal Finish: BRIGHT TIN OVER NICKEL; Nominal Light Current: .4 mA; Maximum Power Dissipation: .165 W; JESD-609 Code: e3;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Peak Wavelength (nm): 900; Minimum Operating Temperature: -55 Cel;

PHOTO TRANSISTOR; Configuration: SINGLE; Size: 2.54 mm; No. of Functions: 1; Nominal Light Current: 1.2 mA; Minimum Collector-emitter Breakdown Voltage: 70 V;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Peak Wavelength (nm): 850; Nominal Light Current: 7.2 mA;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Shape: ROUND; Infrared (IR) Range: YES; Maximum Power Dissipation: .075 W; Maximum Operating Temperature: 85 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 5 mm; Maximum Operating Temperature: 85 Cel; Nominal Light Current: 3.5 mA; Minimum Operating Temperature: -25 Cel;