Toshiba - TOLD9200(F)

LASER DIODE; Maximum Response Time: .00000000012 s; Peak Wavelength (nm): 1556; Maximum Forward Current: .3 A; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 85 Cel;

LASER DIODE; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1553;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 1.5 V; Minimum Operating Temperature: 0 Cel; Peak Wavelength (nm): 1550;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1310; Maximum Forward Current: .15 A; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000005 s; Peak Wavelength (nm): 875; Semiconductor Material: AlGaAs; Maximum Operating Temperature: 60 Cel;

CVN63-90ECL by Osi Laser Diode is a 2.2mm ROUND LASER DIODE with 8m SPECTRAL BANDWIDTH. It features SINGLE configuration and RADIAL MOUNT, ideal for optical communication systems and medical devices requiring precise laser technology.

LASER DIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 65 Cel; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1550;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .085 A; Peak Wavelength (nm): 780; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: 15 Cel; Peak Wavelength (nm): 1310; Maximum Forward Current: .15 A; Maximum Forward Voltage: 1.5 V;

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -20 Cel;

LASER DIODE; Spectral Bandwidth: 15 m; Peak Wavelength (nm): 1625; Maximum Forward Current: 1.2 A; Maximum Response Time: .000000002 s; Minimum Operating Temperature: -20 Cel;

LASER DIODE; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1550; Maximum Forward Current: .15 A; Semiconductor Material: GaAs; Minimum Operating Temperature: 0 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Minimum Operating Temperature: 0 Cel; Peak Wavelength (nm): 1310; Maximum Forward Voltage: 2 V;

LASER DIODE; Mounting Feature: SURFACE MOUNT; Nominal Output Power: 2000 W; No. of Functions: 1; Maximum Operating Temperature: 60 Cel; Size: 4.5 mm;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000003 s; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1310; Maximum Forward Voltage: 1.5 V;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Peak Wavelength (nm): 975; No. of Functions: 1;

Laser Diodes;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 790;

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Voltage: 4.5 V; Maximum Operating Temperature: 85 Cel; Packing Method: TR, 7 INCH; Maximum Threshold Current: 900 mA;

LASER DIODE;