Toshiba - 1SV312

1SV312 by Toshiba

Image shown is a representation only.

Manufacturer	Toshiba
Manufacturer's Part Number	1SV312
Description	PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	1SV312 Datasheet

1SV312 Technical Details

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Reverse Test Voltage:	50 V
Maximum Forward Voltage (VF):	1 V
Diode Type:	PIN DIODE
Maximum Repetitive Peak Reverse Voltage:	50 V
Sub-Category:	Other Diodes
Surface Mount:	YES
Terminal Finish:	Tin/Lead (Sn/Pb)
JESD-609 Code:	e0
Maximum Reverse Current:	.1 uA
Minimum Operating Temperature:	-55 Cel
Diode Element Material:	SILICON
No. of Terminals:	4
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Technology:	POSITIVE-INTRINSIC-NEGATIVE
JESD-30 Code:	R-PDSO-G4
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	125 Cel

Powered by Partstack

Popular Products

SS14

Frontier Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LL4148

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BSS123,215

NXP Semiconductors

NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.

BAV99-7-F

Diodes Incorporated

Diodes Inc. BAV99-7-F is a series-connected, center tap diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.004 us and can handle up to 0.3A output current. Ideal for rectification applications requiring fast switching and low reverse current requirements.

SS14

Rugao Dachang Electronic

RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Maximum Forward Voltage (VF): .55 V; No. of Elements: 1; Technology: SCHOTTKY;

SMBJ18CA

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LM358N

NXP Semiconductors

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

LM358N

Silicon Group

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

SN65HVD230DR

Texas Instruments

SN65HVD230DR by Texas Instruments is a BICMOS technology interface circuit with 1Mbps data rate, suitable for industrial applications. It operates at 3.3V, has 8 terminals in a small outline package, and can withstand temperatures from -40 to 85°C.

2N7002

Diotec Semiconductor Ag

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: MATTE TIN;

Category Top Products