TE Connectivity - UF28100H

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; JESD-30 Code: R-CDFM-F4; Package Shape: RECTANGULAR;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; JESD-30 Code: R-PDFM-F2; Package Style (Meter): FLANGE MOUNT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.2 W; Transistor Application: AMPLIFIER; Moisture Sensitivity Level (MSL): 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Position: DUAL; Maximum Drain Current (ID): 54 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Additional Features: HIGH RELIABILITY; Highest Frequency Band: L BAND; Minimum DS Breakdown Voltage: 15 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Maximum Operating Temperature: 200 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 150 V; Terminal Position: QUAD; Highest Frequency Band: S BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (Abs) (ID): 16 A; Maximum Drain-Source On Resistance: .5 ohm;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 800 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Operating Temperature: 200 Cel; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 59 W; Maximum Operating Temperature: 165 Cel; Maximum Drain Current (ID): 5 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR;