STMicroelectronics - SD2902

STMicroelectronics PD55025-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 7A Drain Current and 79W Power Dissipation. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.

RF Power Field-Effect Transistors;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; Maximum Drain Current (ID): .25 A;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 4; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e0;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;

STMicroelectronics' PD55015STR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 7A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a PLASTIC/EPOXY package, SINGLE configuration, and operates in ENHANCEMENT MODE.

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Terminals: 4; Maximum Time At Peak Reflow Temperature (s): 40; Package Shape: RECTANGULAR;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Package Body Material: CERAMIC, METAL-SEALED COFIRED; No. of Elements: 1;

RF Power Field-Effect Transistors; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co); Moisture Sensitivity Level (MSL): 3;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Terminals: 4; Highest Frequency Band: L BAND; Terminal Form: FLAT;

N-CHANNEL; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 500 V; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 6;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 7 A;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 28 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Qualification: Not Qualified; Transistor Element Material: GALLIUM ARSENIDE;