STMicroelectronics - RF5L10111K0CB4

GS66508T-MR by Gan Systems is a N-CHANNEL FET for SWITCHING applications. It operates at 650V with 30A ID, suitable for VERY HIGH FREQUENCY BAND. This ENHANCEMENT MODE transistor in CHIP CARRIER package uses GALLIUM NITRIDE tech and can withstand -55 to 150 °C temperatures.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 1; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

RF Power Field-Effect Transistors;

RF Power Field-Effect Transistors;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; No. of Terminals: 4; Maximum Feedback Capacitance (Crss): 2.5 pF;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; JESD-30 Code: R-PQSO-N4; Package Shape: RECTANGULAR;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 74 W; JESD-30 Code: R-PDFP-F2; Package Style (Meter): FLATPACK;

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): 260; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: QUAD; Minimum Operating Temperature: -40 Cel;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 65 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 104 V; Peak Reflow Temperature (C): NOT SPECIFIED;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Minimum Operating Temperature: -40 Cel; JESD-609 Code: e3;

NXP Semiconductors' AFT26H250-24SR6 is an N-CHANNEL RF Power FET with METAL-OXIDE SEMICONDUCTOR tech. It operates up to 225°C, withstands peak reflow at 260°C for 40s. Ideal for high-power RF applications in various industries.