Silicon Labs - 515CDB25M0000BAG

515CDB25M0000BAG by Silicon Labs

Image shown is a representation only.

Manufacturer	Silicon Labs
Manufacturer's Part Number	515CDB25M0000BAG
Description	Other Oscillators; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Minimum Operating Frequency: .1 MHz; Terminal Finish: NICKEL GOLD; Qualification: Not Qualified;
Datasheet	515CDB25M0000BAG Datasheet

515CDB25M0000BAG Technical Details

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Nominal Supply Voltage:	3.3 V
Minimum Operating Frequency:	.1 MHz
Sub-Category:	Other Oscillators
Maximum Supply Current:	29 mA
Terminal Finish:	NICKEL GOLD
JESD-609 Code:	e4
Minimum Operating Temperature:	-40 Cel
Mounting Feature:	SURFACE MOUNT
No. of Terminals:	6
Qualification:	Not Qualified
Package Equivalence Code:	SOLCC6,.12
Nominal Operating Frequency:	25 MHz
Maximum Operating Temperature:	85 Cel
Maximum Operating Frequency:	212.5 MHz
Power Supplies (V):	3.3

Powered by Partstack

Popular Products

MMBT2222ALT1G

Onsemi

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.

2N7002

Yangzhou Yangjie Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Drain Current (ID): .34 A;

LM358MX

ROHM

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;

2N2222A

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;

2N2222A

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;

LL4148

Lite-on Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

SS14

Microsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SS14

Taiwan Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MBR1560CT

Yangzhou Yangjie Electronics

RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Maximum Repetitive Peak Reverse Voltage: 60 V; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 150 A;

BSS84PH6327XTSA2

Infineon Technologies

BSS84PH6327XTSA2 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.17A and on-resistance of 8 ohm, it offers reliable performance in small outline packages.

Category Top Products