Shandong Yiguang Electronic Joint Stock - MMBTH10LT1

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON;

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .05 A; Package Style (Meter): UNCASED CHIP;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; Terminal Finish: TIN LEAD;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .08 A; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Package Style (Meter): SMALL OUTLINE; JESD-609 Code: e6;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 44000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .045 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2400 MHz; Maximum Collector Current (IC): .025 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .05 A; Maximum Collector-Base Capacitance: 2.5 pF;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 470 MHz; Maximum Collector Current (IC): .025 A; Moisture Sensitivity Level (MSL): 1;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): .025 A; Maximum Collector-Base Capacitance: .8 pF;

BFR183E6327HTSA1 by Infineon Technologies is an NPN RF Small Signal BJT transistor with a max collector-emitter voltage of 12V and a nominal transition frequency of 8000MHz. It is designed for ultra-high frequency band applications such as amplifiers, featuring a small outline package style and Gull Wing terminal form for surface mount assembly.

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .025 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 850 MHz; Maximum Collector Current (IC): .05 A; Maximum Operating Temperature: 150 Cel;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .2 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; JESD-30 Code: O-PBCY-T3; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .15 A; Maximum Operating Temperature: 150 Cel;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .58 W; Maximum Collector Current (IC): .08 A;