SKM100GB125DN by Semikron International | Vyrian | Semiconductor & Electronic Component Distributor

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Manufacturer	Semikron International
Manufacturer's Part Number	SKM100GB125DN
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Case Connection: ISOLATED; Terminal Finish: TIN/SILVER;
Datasheet	SKM100GB125DN Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	100 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Terminal Finish:	TIN/SILVER
Nominal Turn Off Time (toff):	380 ns
No. of Terminals:	7
Terminal Position:	UPPER
Nominal Turn On Time (ton):	120 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X7
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3/e4
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1200 V
Maximum Gate-Emitter Voltage:	20 V
Reference Standard:	IEC-60747-1; UL RECOGNIZED
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	3.85 V

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