Semicoa - 2N5109

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .04 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .025 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

NXP Semiconductors' BFT92W,115 is a PNP RF BJT transistor with 3 terminals. It operates in L Band with fT of 4000 MHz and hFE of 20. Ideal for amplifier applications, it has a max power dissipation of 0.3 W and can handle up to 15V collector-emitter voltage.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; JEDEC-95 Code: TO-236AB; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .07 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

MMBTH10-4LT1G by Onsemi is an NPN RF BJT with a max. collector-emitter voltage of 25V and fT of 800MHz. Ideal for ultra-high frequency applications, it has a small outline package, matte tin finish, and operates up to 150°C.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; No. of Elements: 1; JESD-609 Code: e0;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .15 A; Maximum Operating Temperature: 150 Cel;

NPN; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 6 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; No. of Elements: 5;

BFR92PE6327 by Infineon Technologies is a NPN RF BJT transistor with a max operating temperature of 150°C. It has a transition frequency of 5000 MHz and can handle a collector current of 0.03 A, making it ideal for L Band switching applications. This surface mount transistor comes in a small outline package with gull wing terminals.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Operating Temperature: 150 Cel;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .035 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .035 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 22000 MHz; Maximum Collector Current (IC): .012 A; Terminal Position: DUAL;