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| Manufacturer | Sangdest Microelectronics (Nanjing) |
|---|---|
| Manufacturer's Part Number | SMBJ30CATR |
| Description | TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR; |
| Datasheet | SMBJ30CATR Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Config: | SINGLE |
| Diode Type: | TRANS VOLTAGE SUPPRESSOR DIODE |
| Surface Mount: | YES |
| Maximum Reverse Current: | 5 uA |
| No. of Terminals: | 2 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Non Repetitive Peak Reverse Power Dissipation: | 600 W |
| Technology: | AVALANCHE |
| JESD-30 Code: | R-PDSO-C2 |
| Minimum Breakdown Voltage: | 33.3 V |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | C BEND |
| Polarity: | BIDIRECTIONAL |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Breakdown Voltage: | 36.8 V |
| Reverse Test Voltage: | 30 V |
| Maximum Repetitive Peak Reverse Voltage: | 30 V |
| Maximum Clamping Voltage: | 48.4 V |
| JEDEC-95 Code: | DO-214AA |
| Minimum Operating Temperature: | -55 Cel |
| Diode Element Material: | SILICON |
| Nominal Breakdown Voltage: | 35.05 V |
| Additional Features: | EXCELLENT CLAMPING CAPABILITY |
| Reference Standard: | MIL-STD-750 |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
