Samsung - KM4232W259A-60

DDR4 DRAM MODULE;

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00025 Amp; No. of Functions: 1;

DDR3L DRAM MODULE; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.35; Terminal Form: NO LEAD;

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; No. of Ports: 1;

DDR3 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

Micron Technology's MT40A1G16TB-062EIT:F is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features a thin profile grid array package and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

Micron Technology's MT48LC4M32B2P-6IT:G is a 3.3V Synchronous DRAM with 4MX32 organization, operating at -40 to 85 °C. It features self-refresh mode, 86 terminals in a small outline package, and offers fast access time of 5.5 ns. Ideal for industrial applications requiring high memory density and synchronous operation.

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words Code: 256M;

Micron Technology's MT44K16M36RB-093:A is a DDR DRAM with 16MX36 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in a compact form factor.

S27KL0642DPBHI020 by Infineon Technologies is an 8MX8 DRAM with a memory density of 67108864 bit. Operating at up to 200 MHz, it features synchronous mode and self-refresh capability. This HYPERRAM is suitable for applications requiring high-speed data storage in compact electronic devices.

MT40A4G8NEA-062E:F by Micron Technology is a DDR4 DRAM with 4GX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package, common I/O type, and self-refresh capability. Ideal for applications requiring high-speed synchronous memory with a density of 34 Gb and low power consumption.

NT5CC256M16ER-EKI by Nanya Technology is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for industrial applications requiring high memory density and reliable performance in a compact grid array package.

MT40A1G16KNR-075:ETR by Micron Technology is a DDR4 DRAM with 1GX16 organization, operating at a max clock frequency of 1333 MHz. It has a thin profile package style and is suitable for applications requiring high-speed synchronous memory.

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DDR5 DRAM; No. of Terminals: 82; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 2403.8 MHz;

Micron Technology's MT40A512M16TB-062EIT:R is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory performance in thin-profile devices.

DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Length: 13 mm;