Samsung - K4H561638N-LCB3

K4H561638N-LCB3 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K4H561638N-LCB3
Description DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet K4H561638N-LCB3 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Standby Current: .003 Amp
Organization: 16MX16
Output Characteristics: 3-STATE
Maximum Time At Peak Reflow Temperature (s): 30
Sub-Category: DRAMs
Surface Mount: YES
Maximum Supply Current: 120 mA
Terminal Finish: MATTE TIN
No. of Terminals: 66
Maximum Clock Frequency (fCLK): 166 MHz
No. of Words: 16777216 words
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Technology: CMOS
JESD-30 Code: R-PDSO-G66
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 70 Cel
Package Code: TSSOP
Moisture Sensitivity Level (MSL): 3
Input/Output Type: COMMON
Memory Density: 268435456 bit
Sequential Burst Length: 2,4,8
Memory IC Type: DDR1 DRAM
JESD-609 Code: e3
Minimum Operating Temperature: 0 Cel
Memory Width: 16
Qualification: Not Qualified
Package Equivalence Code: TSSOP66,.46
Refresh Cycles: 8192
Interleaved Burst Length: 2,4,8
Maximum Access Time: .7 ns
No. of Words Code: 16M
Nominal Supply Voltage / Vsup (V): 2.5
Peak Reflow Temperature (C): 260
Terminal Pitch: .635 mm
Temperature Grade: COMMERCIAL
Power Supplies (V): 2.5
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