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| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | K4D263238F-QC50 |
| Description | DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: TQFP; Refresh Cycles: 4096; Package Shape: RECTANGULAR; |
| Datasheet | K4D263238F-QC50 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Organization: | 4MX32 |
| Output Characteristics: | 3-STATE |
| Maximum Seated Height: | 1.2 mm |
| Access Mode: | FOUR BANK PAGE BURST |
| Minimum Supply Voltage (Vsup): | 2.375 V |
| Sub-Category: | DRAMs |
| Surface Mount: | YES |
| Terminal Finish: | TIN LEAD |
| No. of Terminals: | 100 |
| Maximum Clock Frequency (fCLK): | 200 MHz |
| No. of Words: | 4194304 words |
| Terminal Position: | QUAD |
| Package Style (Meter): | FLATPACK, THIN PROFILE |
| Technology: | CMOS |
| JESD-30 Code: | R-PQFP-G100 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | SYNCHRONOUS |
| Maximum Operating Temperature: | 65 Cel |
| Package Code: | TQFP |
| Width: | 14 mm |
| Input/Output Type: | COMMON |
| No. of Ports: | 1 |
| Memory Density: | 134217728 bit |
| Self Refresh: | YES |
| Sequential Burst Length: | 2,4,8,FP |
| Memory IC Type: | DDR1 DRAM |
| JESD-609 Code: | e0 |
| Minimum Operating Temperature: | 0 Cel |
| Memory Width: | 32 |
| No. of Functions: | 1 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | TQFP100,.7X.9,25 |
| Refresh Cycles: | 4096 |
| Interleaved Burst Length: | 2,4,8 |
| Length: | 20 mm |
| Maximum Access Time: | .7 ns |
| No. of Words Code: | 4M |
| Nominal Supply Voltage / Vsup (V): | 2.5 |
| Additional Features: | AUTO/SELF REFRESH |
| Terminal Pitch: | .65 mm |
| Temperature Grade: | COMMERCIAL |
| Maximum Supply Voltage (Vsup): | 2.625 V |
| Power Supplies (V): | 2.5 |
