Renesas Electronics - PH5503A2NA1-Y-A

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 880; Configuration: SINGLE; Maximum Operating Temperature: 100 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Maximum Response Time: .000009 s; Maximum Operating Temperature: 125 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -60 Cel; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation: .05 W; Maximum Response Time: .000008 s;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 800; Shape: ROUND; Maximum Operating Temperature: 85 Cel; No. of Functions: 1;

PHOTO TRANSISTOR; Minimum Operating Temperature: -30 Cel; Nominal Light Current: .02 mA; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Dark Current: 100 nA; Configuration: SINGLE;

PHOTO TRANSISTOR;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Infrared (IR) Range: YES; Additional Features: SIDE VIEW; Nominal Light Current: .25 mA;

PHOTO DARLINGTON; Minimum Operating Temperature: 0 Cel; Infrared (IR) Range: NO; Size: 1.6 mm; Configuration: SINGLE; Additional Features: DOUBLE END; HIGH SENSITIVITY;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 900; Maximum Response Time: .000015 s; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 850; Maximum Dark Current: 200 nA; JESD-609 Code: e0;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 950; Minimum Operating Temperature: -40 Cel; Maximum Power Dissipation: .13 W;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Configuration: SINGLE; Maximum Operating Temperature: 100 Cel; Minimum Collector-emitter Breakdown Voltage: 30 V; Size: 1.58 mm;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Infrared (IR) Range: YES; JESD-609 Code: e3; Maximum Response Time: .000008 s;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum On State Current: .015 A; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel; Maximum Dark Current: 200 nA;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .001 s; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Maximum Dark Current: 100 nA;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Peak Wavelength (nm): 850; Nominal Light Current: 7.2 mA;

QSD123.A4R0 by Qt Optoelectronics is a 5mm round phototransistor with max operating temp of 100°C and min of -40°C. It has nominal light current of 4mA, dark current of 100nA, and IR range. Ideal for applications requiring reliable photo detection in various temperature conditions.

QSE113 by Qt Optoelectronics is a single configuration phototransistor with a size of 0.062 mm. It operates in temperatures ranging from -40 to 100 °C and has a max power dissipation of 0.1 W. It is commonly used in applications requiring infrared detection and has a fast response time of 0.000008 s.

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Nominal Light Current: .65 mA; Maximum Dark Current: 200 nA; Maximum Operating Temperature: 100 Cel; Maximum On State Current: .015 A;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Peak Wavelength (nm): 900; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -60 Cel;