Renesas Electronics - NX8566LE358-BC

  1. Home
  2. Renesas Electronics - NX8566LE358-BC
NX8566LE358-BC by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NX8566LE358-BC
Description LASER DIODE; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1536; Maximum Forward Voltage: 2 V;
Datasheet NX8566LE358-BC Datasheet
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Maximum Forward Current: .15 A
Peak Wavelength (nm): 1536
Maximum Response Time: .000000000125 s
Maximum Operating Temperature: 70 Cel
Sub-Category: Laser Diodes
Maximum Forward Voltage: 2 V
Minimum Operating Temperature: -20 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

NX8571SC811-BA by Renesas Electronics

NX8571SC811-BA

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1581; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP;
DL7032-001 by Onsemi

DL7032-001

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 830; Maximum Forward Current: .15 A; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;
TOLD70 by Toshiba

TOLD70

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 50 Cel; Maximum Forward Current: .15 A; JESD-609 Code: e0;
TOLD9412(S) by Toshiba

TOLD9412(S)

Toshiba

LASER DIODE; No. of Functions: 1; Peak Wavelength (nm): 650; Nominal Output Power: 3 W;
NX8571SC963-BA by Renesas Electronics

NX8571SC963-BA

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1596; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A;
NX8570SA509-CA by Renesas Electronics

NX8570SA509-CA

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1551;
STM81004G by Infineon Technologies

STM81004G

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .12 A; Minimum Operating Temperature: -40 Cel; Peak Wavelength (nm): 1590;
TOLD161 by Toshiba

TOLD161

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 780;
TOLD9463MD by Toshiba

TOLD9463MD

Toshiba

LASER DIODE; Peak Wavelength (nm): 650; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; No. of Functions: 1; Shape: ROUND; Nominal Output Power: 10 W;
NX8570SC457D-BA by Renesas Electronics

NX8570SC457D-BA

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1546; Maximum Forward Voltage: 2.5 V;
NDL3310 by Renesas Electronics

NDL3310

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .095 A; Peak Wavelength (nm): 650; Maximum Forward Voltage: 3 V; Maximum Operating Temperature: 40 Cel;
NX8571SC716-BA-AZ by Renesas Electronics

NX8571SC716-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1572; Minimum Operating Temperature: -5 Cel;
NX8571SC650-BA by Renesas Electronics

NX8571SC650-BA

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1565; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V;
NX8567SAS553-BC by Renesas Electronics

NX8567SAS553-BC

Renesas Electronics

LASER DIODE; Maximum Forward Current: .15 A; Maximum Response Time: .000000000125 s; Peak Wavelength (nm): 1555; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -5 Cel;
STH51002Z by Infineon Technologies

STH51002Z

Infineon Technologies

LASER DIODE; Maximum Threshold Current: 15 mA; Shape: ROUND; No. of Functions: 1; Peak Wavelength (nm): 1280; Nominal Output Power: 5 W;
DL-3147-185 by Onsemi

DL-3147-185

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .05 A; Maximum Forward Voltage: 2.6 V; Maximum Operating Temperature: 80 Cel; Minimum Operating Temperature: -10 Cel;
NX8560SJ389-CC by Renesas Electronics

NX8560SJ389-CC

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Semiconductor Material: GaAs; Maximum Response Time: .00000000004 s;
CQF25B/D11 by NXP Semiconductors

CQF25B/D11

NXP Semiconductors

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 850; Minimum Operating Temperature: -10 Cel;
NX8570SA589-CA by Renesas Electronics

NX8570SA589-CA

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1559; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP;
NX8570SC409D-BA by Renesas Electronics

NX8570SC409D-BA

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1541;