Renesas Electronics - HL6326G

HL6326G by Renesas Electronics

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	HL6326G
Description	LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Semiconductor Material: AlGaInP; Nominal Output Power: 5 W; Peak Wavelength (nm): 635;
Datasheet	HL6326G Datasheet

HL6326G Technical Details

NAME	DESCRIPTION
Shape:	ROUND
Configuration:	SINGLE WITH BUILT-IN PHOTO DIODE
Size:	2 mm
Sub-Category:	Laser Diodes
Maximum Forward Voltage:	2.4 V
Minimum Operating Temperature:	-10 Cel
Mounting Feature:	THROUGH HOLE MOUNT
No. of Functions:	1
Optoelectronic Type:	LASER DIODE
Nominal Output Power:	5 W
Maximum Forward Current:	.06 A
Peak Wavelength (nm):	635
Maximum Threshold Current:	50 mA
Maximum Operating Temperature:	60 Cel
Semiconductor Material:	AlGaInP

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