Raytheon Semiconductor - JANTX2N2222A

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; JEDEC-95 Code: TO-236AB;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;

MMUN2211LT1G by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. This small outline transistor operates up to 150°C and comes in a rectangular package suitable for surface mount assembly.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL;

BC847BPN,115 by NXP Semiconductors is a Small Signal BJT with NPN and PNP types. It has 2 elements, 6 terminals, hFE of 200, and max power dissipation of 0.4W. Ideal for switching applications with max operating temp of 150°C and VCE of 45V.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; No. of Terminals: 3; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;

BC547CBU by Onsemi is a NPN BJT transistor with hFE of 420, VCE of 45V, and IC of 0.1A. Ideal for switching applications, it has a max power dissipation of 0.625W and operates up to 150°C. Its through-hole package makes it suitable for various electronic circuits.

The NXP Semiconductors PMBT2222A,215 is a NPN BJT transistor for switching applications. It has a max VCEsat of 1V, min hFE of 40, and max IC of 0.6A. With a package style of small outline and peak reflow temp of 260C, it operates b/w -65 to 150 °C for various electronic circuits.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; JESD-609 Code: e3;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Package Body Material: METAL; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;

2N2907A by Texas Instruments is a PNP BJT transistor with max. power dissipation of 0.4W, hFE of 100, and max. collector-emitter voltage of 60V. Ideal for switching applications due to its fast turn-on time (45ns) and high transition frequency (200MHz).

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;

Diodes Inc. MMBT3904T-7-F is a NPN BJT with 40V VCEO, 0.2A IC, and 300MHz fT. Ideal for small signal amplification in compact electronic devices due to its small outline package and high transition frequency. Suitable for surface mount applications requiring fast switching speeds and low power dissipation.