P1db - BLF147

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; No. of Terminals: 2; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Terminal Position: DUAL; Transistor Application: AMPLIFIER;

NXP Semiconductors' AFT27S006NT1 is a single N-channel RF Power FET with 21 dB min power gain, operating in the ultra-high frequency band. This enhancement mode transistor has a max power dissipation of 1.5W and operates b/w -40 to 150°C. It is commonly used in applications requiring high-frequency signal amplification and transmission.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 690 W; Terminal Finish: Matte Tin (Sn); Maximum Operating Temperature: 225 Cel;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

RF Power Field-Effect Transistors;

NE5550979A-T1-A by Renesas Electronics is a N-CHANNEL RF Power FET with 3A max drain current and 25W power dissipation. Ideal for high-frequency applications, it operates up to 150°C, making it suitable for various RF power amplification needs in surface-mount configurations.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; No. of Elements: 1; Transistor Element Material: SILICON;

The NXP Semiconductors BLF574 is an RF Power FET with a common source configuration and 2 elements. Operating in the ultra high frequency band, it has a max drain current of 56A and operates in enhancement mode. Ideal for amplifier applications, this transistor features a ceramic-metal sealed co-fired package body material and can withstand temperatures up to 225°C.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.2 W; Maximum Drain Current (ID): 2 A; JESD-609 Code: e3;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Terminals: 4; Terminal Position: DUAL; No. of Elements: 2;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Qualification: Not Qualified; Additional Features: HIGH RELIABILITY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 389 W; JESD-30 Code: O-PRFM-F4; Maximum Drain Current (ID): 20 A;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Qualification: Not Qualified; Package Style (Meter): FLANGE MOUNT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 795 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 40 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PQCC-N4; Transistor Element Material: SILICON; Package Style (Meter): CHIP CARRIER;

RF Power Field-Effect Transistors; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co); Moisture Sensitivity Level (MSL): 3;