Onsemi - TIP42C

ULN2003APW by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, suitable for switching applications. This surface-mount transistor in small outline package is made of silicon with nickel/palladium/gold terminal finish.

TIP41C by Texas Instruments is a NPN BJT transistor with 100V VCE, 6A IC, and 65W Ptot. Ideal for switching applications due to its single configuration and high power dissipation capability. Its silicon material and 3MHz fT make it suitable for various electronic designs.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 2 A; Maximum VCEsat: 2.5 V;

Power Bipolar Transistors; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; No. of Terminals: 3; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;

PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Terminal Position: SINGLE;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Transistor Application: SWITCHING; Additional Features: LOGIC LEVEL COMPATIBLE;

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;

2SC5200 by STMicroelectronics is a NPN BJT transistor with 150W power dissipation, 230V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications due to its single configuration and 30MHz transition frequency. Package style is flange mount with matte tin terminal finish.

2N3055AG by Onsemi is a NPN BJT transistor with 115W power dissipation, 60V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications due to its single configuration and 0.8MHz transition frequency.

TIP36C by Texas Instruments is a PNP power bipolar junction transistor with a max collector-emitter voltage of 100V and a max collector current of 25A. It is commonly used for switching applications due to its high power dissipation of 125W and nominal transition frequency of 3MHz.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON; Maximum Turn Off Time (toff): 2400 ns;

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 12 A; Terminal Form: THROUGH-HOLE;

NPN; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;