Onsemi - SZNUP1105LT1G

SZNUP1105LT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number SZNUP1105LT1G
Description TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet SZNUP1105LT1G Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Config: COMMON CATHODE, 2 ELEMENTS
Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE
Sub-Category: Transient Suppressors
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 3
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W
Technology: AVALANCHE
JESD-30 Code: R-PDSO-G3
Minimum Breakdown Voltage: 25.7 V
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Polarity: BIDIRECTIONAL
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Maximum Breakdown Voltage: 28.4 V
Maximum Repetitive Peak Reverse Voltage: 24 V
Maximum Clamping Voltage: 44 V
JEDEC-95 Code: TO-236
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Diode Element Material: SILICON
Nominal Breakdown Voltage: 54.1 V
Reference Standard: AEC-Q101; IEC-61000-4-2, 4-4, 4-5
Peak Reflow Temperature (C): NOT SPECIFIED
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