Onsemi - MMBF4416

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 30 V; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 160 Cel; Maximum Power Dissipation Ambient: .3 W; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Qualification: Not Qualified; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-92; Operating Mode: DEPLETION MODE; Package Shape: ROUND;

NXP Semiconductors' CLF1G0035-100PU is an N-CHANNEL RF FET with 150V DS breakdown voltage. It features a common source configuration, suitable for S BAND applications like amplifiers. The transistor utilizes high electron mobility GaN technology in a ceramic-metal package with flange mount style.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: DEPLETION MODE; JEDEC-95 Code: TO-206AF; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL;

RF Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); JESD-609 Code: e4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HETERO-JUNCTION; JESD-30 Code: O-PRDB-G4; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; No. of Elements: 2; JESD-30 Code: R-PDSO-G4;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 7 V; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Body Material: METAL; Maximum Feedback Capacitance (Crss): .8 pF;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: WIRE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .03 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; No. of Elements: 1; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Qualification: Not Qualified; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Package Style (Meter): CYLINDRICAL; Qualification: Not Qualified;