Onsemi - J211-D74Z

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Package Shape: ROUND; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; Field Effect Transistor Technology: JUNCTION; Maximum Feedback Capacitance (Crss): .4 pF;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): .03 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: JUNCTION; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; No. of Terminals: 3;

N-CHANNEL; Maximum Power Dissipation Ambient: .13 W; Maximum Drain Current (Abs) (ID): .06 A; Maximum Drain Current (ID): .06 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Form: GULL WING; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 7 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Terminal Form: THROUGH-HOLE; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 7 V; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; JESD-30 Code: O-PBCY-T3; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Minimum DS Breakdown Voltage: 30 V; Terminal Position: BOTTOM;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Terminals: 3; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Transistor Element Material: SILICON; Maximum Operating Temperature: 200 Cel;

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Transistor Element Material: SILICON; JESD-30 Code: O-MBCY-W4; Terminal Form: WIRE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: THROUGH-HOLE; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain Current (ID): .03 A; No. of Terminals: 4;