Onsemi - CPH6904-TL-E

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; JESD-30 Code: O-PBCY-T3; Terminal Form: THROUGH-HOLE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Case Connection: SOURCE; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Highest Frequency Band: VERY HIGH FREQUENCY BAND; JEDEC-95 Code: TO-236AB;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DUAL GATE, DEPLETION MODE; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; JESD-30 Code: R-PDSO-G4;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-609 Code: e3; Maximum Drain Current (ID): .03 A;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Feedback Capacitance (Crss): .035 pF; Case Connection: SOURCE;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 6 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; No. of Terminals: 3; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .04 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Maximum Drain Current (ID): .06 A; Maximum Drain Current (Abs) (ID): .06 A; Maximum Power Dissipation Ambient: .13 W;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Field Effect Transistor Technology: JUNCTION; Moisture Sensitivity Level (MSL): 1;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): .04 A; Case Connection: SOURCE;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain Current (ID): .03 A; Terminal Finish: TIN;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Position: BOTTOM; Operating Mode: DEPLETION MODE; JESD-30 Code: O-PBCY-T3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Drain Current (ID): .01 A; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; Maximum Drain Current (ID): .1 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation Ambient: .31 W; JEDEC-95 Code: TO-92; Minimum Operating Temperature: -65 Cel;