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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | PESD5V0S1BA |
| Description | TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR; |
| Datasheet | PESD5V0S1BA Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Config: | SINGLE |
| Diode Type: | TRANS VOLTAGE SUPPRESSOR DIODE |
| Sub-Category: | Transient Suppressors |
| Surface Mount: | YES |
| Terminal Finish: | Tin (Sn) |
| No. of Terminals: | 2 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Non Repetitive Peak Reverse Power Dissipation: | 130 W |
| Technology: | AVALANCHE |
| JESD-30 Code: | R-PDSO-G2 |
| Minimum Breakdown Voltage: | 5.5 V |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Polarity: | BIDIRECTIONAL |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| Maximum Breakdown Voltage: | 9.5 V |
| Maximum Repetitive Peak Reverse Voltage: | 5 V |
| Maximum Clamping Voltage: | 14 V |
| JESD-609 Code: | e3 |
| Diode Element Material: | SILICON |
| Qualification: | Not Qualified |
| Nominal Breakdown Voltage: | 7.5 V |
| Additional Features: | LOW CAPACITANCE |
| Peak Reflow Temperature (C): | 260 |
