NXP Semiconductors - LWE2015RTRAY

LWE2015RTRAY by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number LWE2015RTRAY
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .25 A; JESD-30 Code: O-CRDB-F2; Qualification: Not Qualified;
Datasheet LWE2015RTRAY Datasheet
NAME DESCRIPTION
Minimum Power Gain (Gp): 8.1 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): .25 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 2
Qualification: Not Qualified
Terminal Position: RADIAL
Package Style (Meter): DISK BUTTON
JESD-30 Code: O-CRDB-F2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Highest Frequency Band: S BAND
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