NXP Semiconductors - LV2024E45R

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 88 W; Maximum Collector Current (IC): .06 A; No. of Terminals: 6;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): 1.6 A; Maximum Operating Temperature: 200 Cel;

NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Qualification: Not Qualified; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .5 A; Terminal Position: SINGLE;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 30;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 7.6 W; Maximum Collector Current (IC): .5 A; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 400 MHz; Maximum Collector Current (IC): .25 A; No. of Terminals: 3;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .05 A; Terminal Form: FLAT; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Transistor Element Material: SILICON; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.4 A; Package Style (Meter): FLANGE MOUNT; Maximum Collector-Emitter Voltage: 17 V;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; No. of Elements: 1; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .25 A; Additional Features: DIFFUSED EMITTER BALLAST RESISTOR; Case Connection: EMITTER;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.3 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 16.7 W; Maximum Collector Current (IC): .9 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 9 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Operating Temperature: 200 Cel;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 67 W; Maximum Collector Current (IC): 2.67 A; Package Shape: SQUARE;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; JESD-30 Code: R-PDSO-G4;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 5 A; Minimum Power Gain (Gp): 5.5 dB; Maximum Collector-Emitter Voltage: 16 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 4 A; Package Body Material: PLASTIC/EPOXY;