NXP Semiconductors - LTE4002S

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LTE4002S by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number LTE4002S
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .09 A; Maximum Collector-Emitter Voltage: 16 V;
Datasheet LTE4002S Datasheet
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): .09 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 2
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 1 W
Maximum Collector-Emitter Voltage: 16 V
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: HIGH RELIABILITY, DIFFUSED EMITTER BALLAST RESISTOR
Highest Frequency Band: S BAND
Maximum Operating Temperature: 200 Cel
Case Connection: EMITTER
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