NXP Semiconductors - CLF1G0060-30U

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 20 V; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 6 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PDSO-G4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Package Shape: ROUND; Package Style (Meter): CYLINDRICAL;

JANTX2N3822 by Defense Logistics Agency is an N-CHANNEL RF FET with 50V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers a Crss of 3pF for VERY HIGH FREQUENCY applications. This SILICON transistor, compliant with MIL-19500/375G, features a CYLINDRICAL package ideal for RF Small Signal circuits.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): .045 pF; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: BOTTOM;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: X BAND; Additional Features: HIGH RELIABILITY; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .03 A;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Maximum Feedback Capacitance (Crss): .035 pF; Terminal Finish: TIN;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Finish: TIN; Operating Mode: DEPLETION MODE; Maximum Operating Temperature: 160 Cel;

2N3819 by Texas Instruments is an N-CHANNEL RF Small Signal Field Effect Transistor (FET) with a min DS Breakdown Voltage of 25V. It operates in DEPLETION MODE and has a max power dissipation of 0.36W. This transistor is commonly used in applications requiring low-power amplification or switching.

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; JESD-609 Code: e0;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Package Style (Meter): CYLINDRICAL; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Terminal Position: DUAL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: JUNCTION; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Transistor Element Material: SILICON; JESD-609 Code: e3;