NXP Semiconductors - CLF1G0035-100P

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 11 dB; No. of Terminals: 4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): .03 A; Operating Mode: DUAL GATE, DEPLETION MODE;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; JESD-30 Code: O-PBCY-T3; Terminal Form: THROUGH-HOLE;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum Power Gain (Gp): 22.8 dB; Case Connection: SOURCE; Terminal Position: DUAL;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Transistor Application: AMPLIFIER; Maximum Feedback Capacitance (Crss): .035 pF;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; JESD-30 Code: R-PDSO-F6; Maximum Drain Current (Abs) (ID): .03 A;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 7 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 30 V;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Case Connection: SOURCE; Maximum Time At Peak Reflow Temperature (s): 30;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; Additional Features: LOW NOISE; Minimum DS Breakdown Voltage: 7 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 4; Maximum Drain Current (ID): .02 A; Package Shape: RECTANGULAR;

RF Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Form: FLAT; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Drain Current (ID): .03 A; Operating Mode: DEPLETION MODE; Minimum Power Gain (Gp): 10 dB;

RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: NO; Package Body Material: METAL; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER;