NXP Semiconductors - BLX93A

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 43 W; Maximum Collector Current (IC): 4.4 A; Maximum Collector-Emitter Voltage: 15 V;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 25 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 67 W; Maximum Collector Current (IC): 2.67 A; Package Shape: SQUARE;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Case Connection: BASE; JESD-30 Code: R-MDFM-F2;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3.5 A; Terminal Position: RADIAL; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 20 A; Maximum Operating Temperature: 175 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 3 A; Highest Frequency Band: L BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 3 A; Minimum Power Gain (Gp): 10 dB;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Collector Current (IC): .5 A; Transistor Application: SWITCHING;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 7 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; JESD-30 Code: R-CDFM-F2; Terminal Position: DUAL;

PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Collector Current (IC): .0113 A; Peak Reflow Temperature (C): 260;

RF Power Bipolar Transistors; Terminal Finish: GOLD; JESD-609 Code: e4;

RF Power Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Qualification: Not Qualified; Transistor Element Material: SILICON;

NPN; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Package Style (Meter): POST/STUD MOUNT; Maximum Collector-Emitter Voltage: 18 V;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Maximum Collector Current (IC): 24 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 8 A; Maximum Operating Temperature: 200 Cel;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 16.7 W; Maximum Collector Current (IC): .82 A; Qualification: Not Qualified;