NXP Semiconductors - BLF278,112

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 110 V; Qualification: Not Qualified;

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-CDFP-F4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; No. of Terminals: 3; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Maximum Power Dissipation (Abs): 1300 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel; Maximum Time At Peak Reflow Temperature (s): 40;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: QUAD; Minimum Operating Temperature: -40 Cel;

CG2H40035F by Wolfspeed is a N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 84V and a min Power Gain (Gp) of 13.5dB. It is commonly used as an amplifier in C Band applications.

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 65 V; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 400 W; Package Style (Meter): FLANGE MOUNT; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Qualification: Not Qualified; Maximum Operating Temperature: 200 Cel; No. of Elements: 2;

N-CHANNEL; Configuration: COMMON SOURCE, 3 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CDFM-F8; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 65 V;

NXP Semiconductors' AFT26H250-24SR6 is an N-CHANNEL RF Power FET with METAL-OXIDE SEMICONDUCTOR tech. It operates up to 225°C, withstands peak reflow at 260°C for 40s. Ideal for high-power RF applications in various industries.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 648 W; Maximum Drain Current (Abs) (ID): 40 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Drain Current (ID): 5 A; Terminal Form: FLAT;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Style (Meter): FLATPACK; Terminal Form: FLAT; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 294 W; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 165 W; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY;

STMicroelectronics PD85004 is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 2A Drain Current. It operates in the Ultra High Frequency Band, suitable for amplifier applications. The transistor features a plastic/epoxy package, flat terminals, and can handle up to 6W power dissipation at 150°C.