NXP Semiconductors - BLF202

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Field Effect Transistor Technology: JUNCTION; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: METAL; Transistor Element Material: SILICON; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Finish: TIN; Operating Mode: DEPLETION MODE; Maximum Operating Temperature: 160 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Terminal Form: GULL WING; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Field Effect Transistor Technology: JUNCTION; Moisture Sensitivity Level (MSL): 1;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDSO-G4;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Case Connection: SOURCE; Operating Mode: DUAL GATE, DEPLETION MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Maximum Drain Current (ID): .03 A; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Additional Features: LOW NOISE; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Operating Mode: DEPLETION MODE;

N-CHANNEL; Maximum Operating Temperature: 250 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Finish: TIN LEAD; Package Style (Meter): CYLINDRICAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Position: DUAL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Package Style (Meter): CYLINDRICAL; No. of Terminals: 3; Qualification: Not Qualified;

RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: NO; Qualification: Not Qualified; Terminal Form: WIRE; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Power Dissipation Ambient: .18 W; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; No. of Terminals: 4; Maximum Operating Temperature: 200 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Case Connection: SOURCE; Minimum DS Breakdown Voltage: 20 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; No. of Elements: 1; JEDEC-95 Code: TO-252;

RF Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;