NXP Semiconductors - BLF202,115

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Operating Mode: DUAL GATE, ENHANCEMENT MODE; No. of Elements: 2; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Case Connection: SOURCE; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Maximum Feedback Capacitance (Crss): 3 pF; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Terminals: 4;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Style (Meter): FLATPACK;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Minimum DS Breakdown Voltage: 7 V; Maximum Feedback Capacitance (Crss): .05 pF; Package Style (Meter): SMALL OUTLINE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 4; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Broadcom's ATF-55143-TR1 is an N-channel RF FET with 15.5 dB power gain, ideal for amplifier applications in C band frequencies. It features a 5V DS breakdown voltage, 0.1A drain current, and operates in enhancement mode. The transistor has a small outline package with gull wing terminals and can handle up to 0.27W power dissipation at 150°C ambient temperature.

NE3210S01-T1B by Renesas Electronics is a N-CHANNEL RF FET with 12 dB Gp for AMPLIFIER applications in KU BAND. It has 3V DS Breakdown Voltage, 0.07A ID, and operates in DEPLETION MODE. The transistor features GULL WING terminals, MICROWAVE package style, and HETERO-JUNCTION technology.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.75 W; Terminal Finish: TIN LEAD; Terminal Form: GULL WING;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Form: GULL WING; Additional Features: LOW NOISE;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL; Package Body Material: PLASTIC/EPOXY;

RF Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Operating Mode: DUAL GATE, DEPLETION MODE; Qualification: Not Qualified;

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; Qualification: Not Qualified; Terminal Finish: TIN LEAD;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 30 V; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL; Moisture Sensitivity Level (MSL): 1;

RF Small Signal Field-Effect Transistors;