NXP Semiconductors - BGU8103

Qorvo's QPM1000 is a wide band low power RF amplifier with 17 dB gain, operating from 2-20 GHz. It can handle up to 33 dBm CW input power and has a characteristic impedance of 50 ohms. Ideal for applications requiring surface mount construction in RF & microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Maximum Operating Frequency: 12000 MHz;

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Frequency: 1200 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 6 dBm; Minimum Operating Frequency: 10 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 10 dB;

Analog Devices' HMC499 is a wide band medium power RF amplifier with 12 dB gain and 20 dBm CW input power. Operating from -55°C to 85°C, it covers frequencies from 21 GHz to 32 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 5 dBm; Additional Features: HIGH RELIABILITY; Maximum Operating Frequency: 2484 MHz; Gain: 29 dB; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e3;

WIDE BAND HIGH POWER; Construction: COMPONENT; Terminal Finish: GOLD; Additional Features: HIGH RELIABILITY; Minimum Operating Temperature: -40 Cel; Gain: 30 dB;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Additional Features: LOW NOISE; JESD-609 Code: e3;

NARROW BAND LOW POWER; Maximum Input Power (CW): 15 dBm; Minimum Operating Frequency: 2300 MHz; Construction: COMPONENT; Minimum Operating Temperature: -40 Cel; Characteristic Impedance: 50 ohm;

Analog Devices' MAX2640EUT+T is a wideband low power RF amplifier with 12.8 dB gain, operating from 300 MHz to 1500 MHz. It has a max input power of 5 dBm and operates on 3/5 V supplies. Ideal for applications requiring surface mount construction in RF & microwave systems.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Package Equivalence Code: LCC24,.16SQ,20;

WIDE BAND HIGH POWER; Terminal Finish: Gold (Au); JESD-609 Code: e4;

Analog Devices' HMC311SC70ETR is a GAAS RF amplifier with 11dB gain, operating from 0-8000MHz. It has a max input power of 10dBm and requires a 5V supply, making it ideal for wideband low-power applications in RF & microwave systems. The component is surface-mountable and operates b/w -40 to 85°C.

WIDE BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Gain: 17 dB; JESD-609 Code: e4; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Additional Features: LOW NOISE;

Qorvo's CMD283C3 is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 2-6 GHz, handles up to 20 dBm CW input power, and has a temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high performance in compact designs.

Analog Devices' HMC8500PM5E is a GAN RF amplifier with 12dB gain, operating from 10MHz to 2800MHz. It has a max input power of 33dBm and VSWR of 6, suitable for wideband high-power applications. The component features a plastic/epoxy package, surface mounting, and operates at temperatures ranging from -40°C to 85°C.

WIDE BAND LOW POWER;

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Maximum Operating Frequency: 1200 MHz; Minimum Operating Temperature: -54 Cel; Minimum Operating Frequency: 10 MHz; Maximum Input Power (CW): 6 dBm;