NXP Semiconductors - BFQ256ATRL

The NXP Semiconductors BFU520XRVL is a RF Small Signal BJT transistor with NPN polarity. It is designed for amplifier applications in the L Band frequency range, with a max operating temperature of 150°C and a min DC current gain of 60 (hFE). This surface mount transistor has a rectangular package shape and four terminals.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .3 A; Package Style (Meter): DISK BUTTON; JESD-30 Code: O-XRDB-F4;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .018 A; Transistor Element Material: SILICON;

RF Small Signal Bipolar Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): .05 A; Maximum Collector-Emitter Voltage: 15 V;

RF Small Signal Bipolar Transistors; Terminal Finish: Tin/Bismuth (Sn/Bi); JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Terminal Position: BOTTOM; JESD-30 Code: O-PBCY-T3;

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; Peak Reflow Temperature (C): 260; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; No. of Elements: 1; JESD-609 Code: e0;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 6.5 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .03 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .3 A; Terminal Position: SINGLE;

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; No. of Elements: 6;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 42000 MHz; Maximum Power Dissipation (Abs): .9 W; Maximum Collector Current (IC): .6 A;

RF Small Signal Bipolar Transistors;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4500 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON;

JANS2N3866AUB by Defense Logistics Agency is an NPN RF BJT with 3.5 pF max collector-base capacitance, 30V max collector-emitter voltage, and 0.4A max collector current. Ideal for ultra-high frequency band amplification applications due to its ceramic-metal-sealed co-fired package body material and small outline package style.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;