NXP Semiconductors - BAP1321LX,315

BAP1321LX,315 by NXP Semiconductors

Image shown is a representation only.

Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BAP1321LX,315
Description	PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	BAP1321LX,315 Datasheet

BAP1321LX,315 Technical Details

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Diode Resistive Test Frequency:	100 MHz
Config:	SINGLE
Diode Type:	PIN DIODE
Frequency Band:	S BAND
Diode Resistive Test Current:	.5 mA
Sub-Category:	PIN Diodes
Surface Mount:	YES
No. of Terminals:	2
Terminal Position:	BOTTOM
Maximum Diode Capacitance:	.38 pF
Package Style (Meter):	CHIP CARRIER
Technology:	POSITIVE-INTRINSIC-NEGATIVE
JESD-30 Code:	R-PBCC-N2
Minimum Breakdown Voltage:	60 V
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Maximum Operating Temperature:	150 Cel
Maximum Diode Forward Resistance:	1.3 ohm
Nominal Minority Carrier Lifetime:	.48 us
Reverse Test Voltage:	0 V
Minimum Operating Temperature:	-65 Cel
Nominal Diode Capacitance:	.32 pF
Diode Element Material:	SILICON
Qualification:	Not Qualified
Maximum Power Dissipation:	.13 W
Application:	ATTENUATOR; SWITCHING

Powered by Partstack

Popular Products

BSS138

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

2N2222A

Ksl Microdevices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

BSS138

Panjit International

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;

2N7002

Secos

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;

LL4148

Temic Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

1N4148

Panjit International

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

2N7002

Panjit International

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;

2N7002

Teledyne Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;

STM8S003F3P6TR

STMicroelectronics

STM8S003F3P6TR by STMicroelectronics is an 8-bit microcontroller with a max clock frequency of 16 MHz. It features 1024 RAM bytes, 128 data EEPROM size, and 5-ch 10-bit ADC channels. Ideal for industrial applications requiring low power mode and connectivity via I2C, SPI, and UART interfaces.

1N5819HW-7-F

Diodes Incorporated

1N5819HW-7-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 1A output current, and 0.75V forward voltage. It's a surface mount device in a small outline package ideal for efficiency applications at temperatures ranging from -65 to 125°C.

Category Top Products