NXP Semiconductors - 934063998115

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: SOURCE; No. of Terminals: 4; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-PBCY-T3; Terminal Finish: TIN LEAD; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: SOURCE; Package Shape: RECTANGULAR; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;

2N3819 by Texas Instruments is an N-CHANNEL RF Small Signal Field Effect Transistor (FET) with a min DS Breakdown Voltage of 25V. It operates in DEPLETION MODE and has a max power dissipation of 0.36W. This transistor is commonly used in applications requiring low-power amplification or switching.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; JEDEC-95 Code: TO-92; Terminal Position: BOTTOM;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Transistor Application: AMPLIFIER; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Application: AMPLIFIER; Terminal Position: DUAL; Reference Standard: IEC-60134;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Qualification: Not Qualified; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Shape: RECTANGULAR; No. of Elements: 2; Maximum Operating Temperature: 150 Cel;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Case Connection: SOURCE; No. of Elements: 2; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DUAL GATE, DEPLETION MODE; JESD-30 Code: R-PDSO-G4; Case Connection: SOURCE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Qualification: Not Qualified; JEDEC-95 Code: TO-92; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Case Connection: SOURCE; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Maximum Feedback Capacitance (Crss): .05 pF; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 30 V; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Case Connection: SHIELD;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Maximum Power Dissipation Ambient: 6.25 W;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Element Material: SILICON; Terminal Form: FLAT;