NXP Semiconductors - 934008060114

  1. Home
  2. NXP Semiconductors - 934008060114
934008060114 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number 934008060114
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 9 A; Transistor Application: AMPLIFIER; Maximum Collector-Emitter Voltage: 15 V;
Datasheet 934008060114 Datasheet
NAME DESCRIPTION
Package Body Material: METAL
Maximum Collector Current (IC): 9 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 15 V
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-MDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: WITH EMITTER BALLASTING RESISTORS
Highest Frequency Band: L BAND
Case Connection: BASE
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

AM1011-500 by STMicroelectronics

AM1011-500

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1360 W; Maximum Collector Current (IC): 27 A; Terminal Position: DUAL;
2N5641 by New Jersey Semiconductor Products

2N5641

New Jersey Semiconductor Products

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 1 A;
MF1011B900YTRAY by NXP Semiconductors

MF1011B900YTRAY

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Terminal Form: FLAT; Qualification: Not Qualified;
SD1390 by STMicroelectronics

SD1390

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 470 MHz; Maximum Power Dissipation (Abs): 8.33 W; Maximum Collector Current (IC): .35 A;
934004150115 by NXP Semiconductors

934004150115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON; Terminal Finish: TIN;
LTE21015R by NXP Semiconductors

LTE21015R

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .45 A; Maximum Collector-Emitter Voltage: 16 V; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MX1011B200YTRAY by NXP Semiconductors

MX1011B200YTRAY

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: FLAT; Qualification: Not Qualified;
BLU56T/R by NXP Semiconductors

BLU56T/R

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 16 V; Terminal Position: DUAL;
SD1460 by STMicroelectronics

SD1460

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 108 MHz; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 16 A;
BFG591TRL by NXP Semiconductors

BFG591TRL

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .2 A; No. of Elements: 1;
RZ2731B32W by NXP Semiconductors

RZ2731B32W

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.8 A; Terminal Form: FLAT; No. of Elements: 1;
SD1489 by STMicroelectronics

SD1489

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 8 A; Maximum Operating Temperature: 200 Cel;
1214-110M by Microsemi

1214-110M

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 8 A; Package Style (Meter): FLANGE MOUNT;
AM1214-200 by STMicroelectronics

AM1214-200

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 575 W; Maximum Collector Current (IC): 16 A; Terminal Position: DUAL;
MRF392 by M/a-com Technology Solutions

MRF392

M/a-com Technology Solutions

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 16 A; Package Shape: RECTANGULAR;
BLS2731-20 by NXP Semiconductors

BLS2731-20

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 3 A; Package Shape: RECTANGULAR;
LFE15600XTRAY by NXP Semiconductors

LFE15600XTRAY

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Additional Features: WITH EMITTER BALLASTING RESISTORS; Case Connection: EMITTER;
SD1434 by STMicroelectronics

SD1434

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 10 A; No. of Elements: 1;
BLV910 by NXP Semiconductors

BLV910

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1.5 A; Terminal Position: DUAL;
2SC5551AE-TD-E by Onsemi

2SC5551AE-TD-E

Onsemi

RF Power Bipolar Transistors; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN BISMUTH; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;